The continued downscaling of CMOS technology has resulted in very high performance devices, but power dissipation is a limiting factor on this way. Power and performance of a device are dependent on process, temperature, and workload variation that makes it impossible to find a single power optimal design. As a result, adaptive power and performance adjustment techniques emerged as attractive methods to improve the effective power efficiency of a device in modern design approaches. Focusing on this issue, in this paper, a novel logic family is proposed that enables tuning the transistor's effective threshold voltage after fabrication for higher speed or lower power. This method along with dynamic voltage scaling allows simultaneous optimization of static and dynamic power based on the workload requirement. The externally static topology of the proposed logic makes it possible to replace static circuits without requiring significant changes in the system. Experimental results obtained using 90-nm CMOS standard technology show that the proposed logic improves the average powerdelay product by about 40% for the attempted benchmarks. KEYWORDS adaptive voltage scaling (AVS), digital logic design, power-performance tunable logic, pseudodynamic logic
| INTRODUCTIONIn the past few decades, digital circuit performance improved rapidly; mostly enabled by aggressive improvement of transistor performance. The exponential decrease in transistor feature sizes accompanied by exponential increase in transistor-switching speed has led to incredible computing power in today's integrated circuit. However, these devices have serious limitations on power dissipation. Obtaining energy efficiency and low peak power while maintaining computational performance is one of the primary goals in contemporary processor design.Transistor variability in very-large-scale integrated circuit. Increases with the very-large-scale integration process technology scaling trend, as smaller transistors have higher circuit parameter uncertainties. On the other hand, the off-leakage current of sub-100 nm processes is considerable. 1 In other words, in the sub-100 nm processes, the off-leakage power is a significant portion of the total power consumed by a circuit. For example, at the 90-nm technology node, leakage power may make up 42% of total power. 2 Beyond the circuit topology, the major factor in control and reduction of leakage power and current is the MOS transistors threshold voltage altering. Threshold voltage is subject of 2 different kinds of controllability: design-time and run-