Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy

Kleinschmit, M.; Yeadon, M.; Gibson, J. M.

doi:10.1063/1.125327

Cited by 23 publications

(13 citation statements)

References 8 publications

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“…Unlike the untreated sample, the wafer treated for 3 min with APM exhibited only the CoSi 2 (111) orientation. This finding is consistent with that of a previous investigation [11]. The single orientation demonstrates the success of epitaxial CoSi 2 formation and the smoothness of the CoSi 2 /Si interface.…”

Section: Resultssupporting

confidence: 94%

Oxide-mediated formation of epitaxy silicide on heavily doped Si surfaces and narrow width active region

Chen

Wang

2006

Thin Solid Films

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Section: Resultssupporting

confidence: 94%

Oxide-mediated formation of epitaxy silicide on heavily doped Si surfaces and narrow width active region

Chen

Wang

2006

Thin Solid Films

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“…From the electron diffraction evidence, it is apparent that, upon reaching the Si surface, the Si-rich phase CoSi 2 is formed directly, with no evidence of any intermediate Co 2 Si or CoSi phase formation being detectable. This is consistent with previous studies of the growth of epitaxial CoSi 2 on Si͑100͒ by oxide-mediated epitaxy by Kleinschmit et al 17 The absence of silicon-rich phases during the annealing process is key to the success of the oxide-mediated epitaxy technique, since full reorientation of nonepitaxial grains by a mechanism such as grain growth is unlikely once such regions have nucleated.…”

supporting

confidence: 91%

Nitride-mediated epitaxy of CoSi2 on Si(001)

Chong

Yeadon

Choi

et al. 2003

Applied Physics Letters

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Epitaxial layers of CoSi 2 have been grown on Si͑100͒ by the technique of nitride-mediated epitaxy. An ultrathin layer of silicon nitride was formed on the Si͑001͒ surface by exposure to ammonia gas at 900°C, followed by the deposition of a layer of Co ϳ20 Å in thickness at room temperature. The sample was then annealed at 600°C and the microstructure monitored by in situ transmission electron microscopy and diffraction. The formation of epitaxial islands of CoSi 2 was observed directly, with no evidence of the formation of intermediate phases. The CoSi 2 islands were found to be elongated along the in-plane Si͗110͘ directions, consistent with reports of the deposition of Co by molecular beam epitaxy on clean Si͑100͒ at low deposition rates and elevated temperature. This technique of silicidation may be of particular interest in the fabrication of advanced devices incorporating multilayer oxide/nitride gate stacks.

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“…Thicker oxides block the silicidation and lead to rough (textured) contacts. Silicidation schemes used to improve contact properties include oxidation prevention by capping layers (Tan et al ., 2002) or oxide mediated epitaxial growth (Kleinschmit et al ., 1999).…”

Section: Resultsmentioning

confidence: 99%

Microstructure and electrical properties of diborides modified by rapid thermal annealing

Zagozdzon‐Wosik¹,

Rusakova²,

Darne³

et al. 2006

Journal of Microscopy

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SummaryDiborides of Ti, Hf and Zr are thermally, mechanically and chemically stable with good thermal and electrical conductivity. We tested their properties in front-end processes used in Si integrated circuits (IC). Films were deposited by e-beam evaporation either on Si, for the formation of contacts to the source/drain (S/D) regions, or on Si oxides, for the formation of metal gates in p-type metal-oxide-semiconductor (PMOS) transistors. We focused on their crystallization caused by rapid thermal processing (RTP) at temperatures up to 1100 °C. Transmission electron microscopy was used for identification of nanocrystallites of TiB 2 , ZrB 2 , and HfB 2 . The grain growth was correlated with temperature and time of RTP. Of all borides, HfB 2 resulted in the most complete crystallization with little amorphous phase left. There was no crystallographic degradation of the interface with Si or dielectrics, except for extreme thermal budgets. Complementary techniques were used for monitoring chemical stability and electrical parameters of test structures to assess the role of recrystallization in device behaviour.

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Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy

Cited by 23 publications

References 8 publications

Oxide-mediated formation of epitaxy silicide on heavily doped Si surfaces and narrow width active region

Oxide-mediated formation of epitaxy silicide on heavily doped Si surfaces and narrow width active region

Nitride-mediated epitaxy of CoSi2 on Si(001)

Microstructure and electrical properties of diborides modified by rapid thermal annealing

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