Nucleation and Growth of Platinum Films on High-k/Metal Gate Materials by Remote Plasma and Thermal ALD

Fang, Q.; Hodson, Chris; Xu, Cigang; Gunn, R.

doi:10.1016/j.phpro.2012.03.600

Cited by 13 publications

(10 citation statements)

References 18 publications

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“…The Pt layer on the Si surface was not identified in EDS and SEM analyses, consistent with a previous report. [25,26] This result further confirmed that a thin Pt layer can be selectively deposited on a Cu surface by ALD.…”

Section: E19-014-4mentioning

confidence: 52%

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Kuwae

Yamada

Kamibayashi

et al. 2020

Transactions of The Japan Institute of Electronics Packaging

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A low-temperature Cu-Cu bonding technique using a thin metal intermediate layer deposited by atomic layer deposition (ALD) was developed. A thin Pt intermediate layer was selectively deposited on the Cu surface at the angstrom level by ALD without any mask under low vacuum conditions (24 Pa). To suppress the deterioration of bonding reliability caused by impurities at the bonding interface, quasi-direct bonding was realized by using a thin Pt intermediate layer. The Cu-Cu quasi-direct bonding with a thin Pt layer provided a bonding strength of 9.5 MPa, which was five times higher than that without the intermediate layer (1.9 MPa). These results will contribute to the development of low-temperature Cu-Cu bonding for three-dimensional integrated circuit chips.

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Section: E19-014-4mentioning

confidence: 52%

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Kuwae

Yamada

Kamibayashi

et al. 2020

Transactions of The Japan Institute of Electronics Packaging

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“…Platinium: ALD of Pt has also been widely studied in the last 20 years because of its excellent chemical and thermal stability and conductivity for potential applications such as the electrodes for ultra-high κ in the cell of DRAM and those for ferroelectric dielectric in FERAM [67,[73][74][75][76]. Its high work function (5.6 eV) and low resistivity (10.5 µΩ•cm) also attracted the attention for the application as p-type metal gates [77].…”

Section: Ald Of P-type Metal Gatementioning

confidence: 99%

“…It was believed that it was the carbonaceous passivation which attributes to the self-limitation and the temperature dependence of the deposition rate. Henkel's work studied the electrical performance of the Pt metal gate in the stacks with Al 2 O 3 , ZrO 2 and SiO 2 [76,77]. They found that the EWF of the ALD Pt strongly depended on the dielectric, 4.76 eV for ZrO 2 , 5.22 eV for Al 2 O 3 and 5.52 eV for SiO 2 .…”

Section: Ald Of P-type Metal Gatementioning

confidence: 99%

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Zhao

Xiang

2019

Applied Sciences

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The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

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“…The chemical vapor deposition (CVD) 1−5 and atomic layer deposition (ALD) 6−9 of platinum thin films from organoplatinum precursors is of interest for a wide variety of applications: as a gate electrode material, 10 as a diffusion barrier or ohmic contact in microelectronic structures, 11,12 as a catalyst, 13−16 as a component of data storage media, 17 and as an electrical contact in medical devices. 18−20 However, the deposition of platinum thin films from ALD or CVD generally suffers from poor nucleation 11,21−24 due to the differences in the reactivities 25 and surface energies 26 of common substrates and platinum.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The chemical vapor deposition (CVD) − and atomic layer deposition (ALD) − of platinum thin films from organoplatinum precursors is of interest for a wide variety of applications: as a gate electrode material, as a diffusion barrier or ohmic contact in microelectronic structures, , as a catalyst, − as a component of data storage media, and as an electrical contact in medical devices. − However, the deposition of platinum thin films from ALD or CVD generally suffers from poor nucleation ,− due to the differences in the reactivities and surface energies of common substrates and platinum. For example, the popular CVD and ALD precursor (C 5 H 4 Me)PtMe 3 has a high barrier to eliminate ligands when it is adsorbed on oxide surfaces , but reacts readily on Pt nuclei owing to the highly catalytic nature of platinum. ,, As a result of poor nucleation, the consequent island growth behavior makes it difficult to grow continuous films that are also very thin.…”

Section: Introductionmentioning

confidence: 99%

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors. Mechanistic Studies of the Thermolysis of Pt[CH₂CMe₂CH₂CH═CH₂]₂ in Solution and the Origin of Rapid Nucleation

et al. 2020

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The compound cis-bis(η1,η2-2,2-dimethylpent-4-en-1-yl)platinum, Pt[CH2CMe2CH2CHCH2]2 (3), is a recently discovered chemical vapor deposition (CVD) precursor for the deposition of highly smooth platinum thin films without nucleation delays on a variety of substrates. This paper describes detailed mechanistic studies of the pathway by which 3 reacts upon being heated in solution. In various solvents between 90 and 130 °C, 3 decomposes to generate ∼1 equiv of 4,4-dimethylpentenes by addition of a hydrogen atom to the pentenyl ligands in 3. The “extra” hydrogen atoms arise by dehydrogenation of other pentenyl ligands; some of these dehydrogenated ligands are released as methyl-substituted methylenecyclobutanes and cyclobutenes. A combination of isotope labeling and kinetic studies suggests that 3 decomposes by C–H activation of both allylic and olefinic C–H bonds to give transient platinum hydride intermediates, followed by reductive elimination steps to form the pentene products, but that the exact mechanism is solvent-dependent. In C6F6, solvent association occurs before C–H bond activation, and the rate-determining step for thermolysis is most likely the formation of a Pt σ complex. In hydrocarbon solvents, the solvent is little involved before C–H bond activation, and the rate-determining step is most likely the formation of a Pt σ complex only for γ-C–H and ε-C–H bond activation, but cleavage or formation of a C–H bond for δ-C–H bond activation. A comparison of the thermolysis reactions under CVD conditions and in solution suggests that the high smoothness of the CVD-grown films is due in part to rapid nucleation (which is a consequence of the availability of low-barrier CC bond dissociation pathways) and in part to the formation of carbon-containing species that passivate the Pt surface.

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Nucleation and Growth of Platinum Films on High-k/Metal Gate Materials by Remote Plasma and Thermal ALD

Cited by 13 publications

References 18 publications

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors. Mechanistic Studies of the Thermolysis of Pt[CH₂CMe₂CH₂CH═CH₂]₂ in Solution and the Origin of Rapid Nucleation

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Nucleation and Growth of Platinum Films on High-k/Metal Gate Materials by Remote Plasma and Thermal ALD

Cited by 13 publications

References 18 publications

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors. Mechanistic Studies of the Thermolysis of Pt[CH2CMe2CH2CH═CH2]2 in Solution and the Origin of Rapid Nucleation

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Platinum ω-Alkenyl Compounds as Chemical Vapor Deposition Precursors. Mechanistic Studies of the Thermolysis of Pt[CH₂CMe₂CH₂CH═CH₂]₂ in Solution and the Origin of Rapid Nucleation