Nucleation and Growth of Bismuth Electrodeposition from Alkaline Electrolyte

Zhou, Longping; Dai, Yatang; Zhang, Huan; Jia, Yu-Rong; Zhang, Jie; Li, Changxiong

doi:10.5012/bkcs.2012.33.5.1541

Cited by 25 publications

(7 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…First, this technique has a high deposition rate, and it is compatible with patterning and large-scale production. Second, high quality Bi thin films can be obtained onto metals (Au, Cu, Al), − semiconducting substrates (GaAs), − glassy carbon, and fluorine-doped tin oxide (FTO)-coated glass . Among all these possible substrates, semiconductors appear as the most interesting for a better integration of Bi films in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

Prados

Ranchal

2018

J. Phys. Chem. C

View full text Add to dashboard Cite

Bismuth thin films constitute a promising nanostructure for the fabrication of spin-based devices. To achieve this goal, it is necessary to obtain high-quality Bi layers with controlled and reproducible properties. Therefore, studies focused on the understanding of the nucleation process and the correlation between the growth conditions and the film properties are of great interest. In this work, we have studied the electrodeposition of Bi thin films onto GaAs(111)B substrates at different overpotentials. In Part I, we have analyzed the nucleation of the films by means of potentiostatic curves. The current density transients have been deconvoluted into individual processes taking into account the energy band diagram of the semiconductor-electrolyte interface. The deconvolution of the current density transients indicates that Bi electrodeposition follows a 3D nucleation controlled by diffusion, accompanied by concurrent processes such as both proton adsorption and reduction. The competition of these processes is controlled by the energy distribution of the surface states at the semiconductor-electrolyte interface and determines the nucleation process. The correlation between the properties of the Bi films and the Bi/GaAs interface with the nucleation process, i.e., with overpotential, is discussed in detail in Part II of this work.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

Prados

Ranchal

2018

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…Thereby, approaching the steady state is controlled by the diffusion of ions from the bulk solution to the electrode surface. Furthermore, I max increases and t max decreases with increasing the applied potential [29][30][31]. Basically, the steady state of electrodeposition is governed by Fick's first law of diffusion, which indicates that the diffusion flux "J" is proportional to the concentration gradient as given by Eq.…”

Section: Electrodeposition Study Of Cu-se Binary Alloymentioning

confidence: 99%

Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

et al. 2022

View full text Add to dashboard Cite

Thin-film deposition using electrodeposition techniques is highly preferable because of its capability to deposit multi-component alloys at low temperatures. In this regard, copper bismuth selenide (CBSe) films were electrodeposited in two various ways, simultaneous and successive electrodeposition processes. The structural and morphological characterizations of the obtained films were performed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray analysis (EDX), and X-ray Photoelectron Spectrometer (XPS). The CBSe alloy films formed by successive electrodeposition revealed better crystallinity and more regular morphology in comparison with simultaneous electrodeposited CBSe films. The prepared CBSe film by successive electrodeposition exhibited high light absorptivity and low band gap energy value (Eg = 1.65 eV) resulting in a higher photoelectrical response. The crystallization of the ternary CBSe film electrodeposited via successive routine obeyed the instantaneous nucleation mechanism, while the CBSe film obtained by simultaneous electrodeposition agreed with the progressive nucleation mechanism. Successive electrodeposition of ternary CBSe alloy film achieved greater values of photocurrent–voltage conversion efficiency (η = 1.26%) in photoelectrochemical systems. Graphic abstract

show abstract

“…To solubilize bismuth in less acidic medium, complexing agents such as tartaric acid [43], dimethylglyoxime [44], ethylene glycol [45], sodium citrate [46] and a mixture of ethylenediaminetetraacetic acid, 5-sulfosalicylic acid and potassium sodium tartrate [47] have been used. They allowed reaching bismuth concentrations up to 0.2 mol L -1 in basic medium.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

New porous bismuth electrode material with high surface area

Abdallah

Derghane

Lou

et al. 2019

Journal of Electroanalytical Chemistry

View full text Add to dashboard Cite

Bismuth electrodes are particularly interesting owing to their high hydrogen evolution overpotential and electrocatalytic activity. In this work, a novel porous bismuth electrode was prepared via an electrochemical deposition of bismuth on a porous graphite felt of high specific surface area, employing bismuth(III) oxide as reactant and a flow electrochemical cell as reactor. A solubility up to 1 mol L-1 of bismuth was obtained in basic medium using a suitable complexing agent. We solved the problems linked to the heterogeneous potential distribution in the 3D porous structure and to the formation of dendritic excrescences that led to mechanically fragile material by using a suitable flow electrochemical cell, a periodically changing current with short on-pulses and long off-pulses and by limiting the electrodeposition of Bi on the external surfaces of the felt due to diffusion. A Bi-modified electrode with high specific surface area and low bulk density was achieved using this method.

show abstract

Nucleation and Growth of Bismuth Electrodeposition from Alkaline Electrolyte

Cited by 25 publications

References 34 publications

Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process

Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

New porous bismuth electrode material with high surface area

Contact Info

Product

Resources

About