2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) 2022
DOI: 10.1109/ectc51906.2022.00343
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Novel zero side-etch process for <1μm package redistribution layers

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Cited by 4 publications
(2 citation statements)
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“…This, however, results in a very rough surface (Ra > 200 nm), leading to challenges during lithography for achieving <5 µm critical dimensions. Therefore, there is an increased focus on the physical vapor deposition of metal seed layers for higher wiring density RDLs [21]. Layer-to-layer registration is a critical aspect affected by the CTE of the underlying dielectric.…”
Section: Fabrication and Processingmentioning
confidence: 99%
“…This, however, results in a very rough surface (Ra > 200 nm), leading to challenges during lithography for achieving <5 µm critical dimensions. Therefore, there is an increased focus on the physical vapor deposition of metal seed layers for higher wiring density RDLs [21]. Layer-to-layer registration is a critical aspect affected by the CTE of the underlying dielectric.…”
Section: Fabrication and Processingmentioning
confidence: 99%
“…To enable high-bandwidth signal processing between chiplets [ 10 ], several techniques, such as dual damascene processing, semi-additive processing (SAP) and polymer damascene processing, have been introduced. These techniques narrow the RDL trace width/pitch to as small as two microns [ 11 , 12 ] and even sub-microns [ 13 ]. To enhance the electricity transmission capacity, traces become thicker, with an aspect ratio of up to 4.2 [ 14 ], which is very different from traditional shell-like thin traces.…”
Section: Introductionmentioning
confidence: 99%