Novel wavelength converter using an electroabsorption modulator: conversion experiments at up to 40 Gbit/s

Edagawa, N.; Suzuki, Masatoshi; Yamamoto, S.; Akiba, S.

doi:10.1109/ofc.1997.719709

Cited by 40 publications

(19 citation statements)

References 4 publications

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“…For electrons and holes, respectively, in well we have (9) (10) where and are the electron and hole densities, respectively, in well , are the current densities of electrons ( ) and holes ( ) between the well states and the bulk states for well ; expressions for these terms may be found in Section II-D below. These terms also appear in the bulk continuity (2) and (3) through the expression in (4).…”

Section: Quantum-well Continuity Equationsmentioning

confidence: 99%

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Modeling of carrier dynamics in quantum-well electroabsorption modulators

Hojfeldt

Mørk

2002

IEEE J. Select. Topics Quantum Electron.

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Abstract-We present a comprehensive drift-diffusion-type electroabsorption modulator (EAM) model. The model allows us to investigate both steady-state properties and to follow the sweep-out of carriers after pulsed optical excitation. Furthermore, it allows for the investigation of the influence that various design parameters have on the device properties, in particular how they affect the carrier dynamics and the corresponding field dynamics. A number of different types of results are presented. We calculate absorption spectra and steady-state field screening due to carrier pile-up at the separate-confinement heterobarriers. We then move on to look at carrier sweep-out upon short-pulse optical excitation. For a structure with one well, we analyze how the well position affects the carrier sweep-out and the absorption recovery. We calculate the field dynamics in a multiquantum-well structure and discuss how the changes in the field near each well affect the escape of carriers from that well. Finally, we look at the influence that the separate-confinement heterostructure barriers have on the carrier sweep-out.

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Section: Quantum-well Continuity Equationsmentioning

confidence: 99%

“…The EAM has been used both for pulse generation [1] and to perform a number of all-optical functions such as demultiplexing [2], [3], wavelength conversion [4], and signal regeneration [5], [6] and may very well become an important part of future all-optical components.…”

mentioning

confidence: 99%

Modeling of carrier dynamics in quantum-well electroabsorption modulators

Hojfeldt

Mørk

2002

IEEE J. Select. Topics Quantum Electron.

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“…An optical sampling gate [1,2,3] with short gating width and high extinction ratio is required for an OPM with high temporal resolution and signal-to-noise ratio. The electro-absorption modulator (EAM) based on cross absorption modulation (XAM) is a leading candidate for a compact optical sampling gate with high cost efficiency [4,5,6,7,8]. A standard EAM for light source has MQW structure absorption layer because of its the low operating voltage and highly efficient characteristics [9,10], however it has drawbacks, such as high polarization dependency and narrow operating wavelength bandwidth for gating device.…”

Section: Introductionmentioning

confidence: 99%

Optical gating width variability using electrode parasitic capacitance

Yamada

Nagashima

Onuki

et al. 2016

IEICE Electron. Express

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Abstract:We developed an optical gating device using a bulk layer and high mesa ridge/BH hybrid structure with input power of 14.5 dBm for optical communication performance monitoring. The shortest gating width of 3.9 ps was obtained in all-optical sampling experiments. However, gated waveform distortion occurred due to superfluous carriers in absorption layer in case of low bias voltage and optical pumping power condition. We have successfully improved waveform quality by extension electric parasitic capacitance to draw out it, thus variable gating width depending on transmission speed has been realized.

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“…One promising all-optical processor is the electroabsorption modulator (EAM) [9], [10], which has proven to be a versatile component in ultra fast WDM and OTDM systems with its ability to perform several different functionalities, yet remaining a simple structure. Recently, various all-optical functionalities based on cross-absorption modulation (XAM) [11], [12] such as demultiplexing [13]- [15], wavelength conversion [14], [16]- [18] and all-optical regeneration [19]- [22]. In this paper we report, for the first time to the best of our knowledge, on a novel optical label encoding scheme employing EAM-based wavelength conversion.…”

Section: Introductionmentioning

confidence: 99%

Optical label encoding using electroabsorption modulators and investigation of chirp properties

Chi

Oxenløwe

et al. 2003

J. Lightwave Technol.

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Abstract-A novel scheme of optical label encoding by wavelength conversion based on electroabsorption modulators (EAMs) is reported. Based on the experimental observations, the chirp properties of the wavelength-converted signal are discussed and a wide dynamic range of the chirp -parameter is found allowed. Compared with cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA), the EAM has several advantages, which make it attractive for optical label encoding or other applications as a wavelength converter.

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Novel wavelength converter using an electroabsorption modulator: conversion experiments at up to 40 Gbit/s

Cited by 40 publications

References 4 publications

Modeling of carrier dynamics in quantum-well electroabsorption modulators

Modeling of carrier dynamics in quantum-well electroabsorption modulators

Optical gating width variability using electrode parasitic capacitance

Optical label encoding using electroabsorption modulators and investigation of chirp properties

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