Novel VCO Architecture Using Series Above-IC FBAR and Parallel LC Resonance

Ostman, Kim B.; Sipilä, Sami; Uzunov, Ivan M.; Tchamov, N.T.

doi:10.1109/jssc.2006.881567

Cited by 40 publications

(27 citation statements)

References 18 publications

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“…Recently, the FBAR resonators which have Q-factor around 1000 or even more, have been used to design low phase noise oscillators [3,4] in GHz-range. However, an FBAR based oscillator encounters instability in low frequency which causes parasitic oscillation and to overcome this problem, designing a high performance FBAR based oscillator is a major challenge.…”

Section: Fig 1 Mbvd Model Of Fbarmentioning

confidence: 99%

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The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

Zhang

Kochhar

Yoshida

et al. 2013

IEICE Electron. Express

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Abstract:In this letter, we propose the methods to mitigate low frequency instability in a film bulk acoustic resonator (FBAR) based cross-coupled voltage-controlled oscillator (FBAR-VCO). The first method employs a capacitor and while the other one employs a series inductor-capacitor. Using the post-layout simulation, a comparative study of the performances such as phase noise and figure of merit (FOM) of the designed FBAR-VCO is carried out. It is found that both the methods inhibit the low frequency instability successfully and the additional advantage of the second method is 2 dB improvement of FOM. Compared to other published FBAR-VCOs, this work has very low phase noise, below −150 dBc/Hz at 1 MHz offset frequency, and much better FOM below −210 dB.

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Section: Fig 1 Mbvd Model Of Fbarmentioning

confidence: 99%

“…That is why in many FBAR-VCOs [3,4], only the simple single ended architecture is employed. In [8], the cross-coupled architecture is adopted, but the reason for the low frequency unstability and its solution are not explained in theory.…”

Section: Low Frequency Instability Analyses and Vco Designmentioning

confidence: 99%

The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

Zhang

Kochhar

Yoshida

et al. 2013

IEICE Electron. Express

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“…However, its temperature/humidity stability (Lakin et al, 2000), higher signal-to-noise ratio (Trolier-McKinstry & Muralt, 2004;Setter, 2005) and the compatibility with CMOS processing are attractive (Gerfers et al, 2006;Oestman et al, 2006). Furthermore, AlN is a large band gap material (6eV) with a large resistivity, whereas ZnO is really a semiconductor (3eV) with the inherent risk of increased conductivity due to off-stoichiometry.…”

Section: Introductionmentioning

confidence: 99%

Sputtered AlN Thin Films for Piezoelectric MEMS Devices - FBAR Resonators and Accelerometers

Gerfers¹,

Kohlstadt²,

Ginsburg³

et al. 2010

Solid State Circuits Technologies

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“…Thus the properties of the new circuit are similar to those of the lattice piezoelectric filters. The resonators are replaced in the analysis by the modified Butterworth-Van Dyke model [2,5] ( Fig. 3a).…”

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confidence: 99%

Easily adjustable FBAR filter circuit

Uzunov

Bradvarov²,

Statev³

et al. 2010

Electron. Lett.

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A filter circuit employing film bulk acoustic resonators (FBAR) or other types of piezoelectric resonators is proposed. It consists of two FBARs and two amplifiers, and is equivalent to a lattice FBAR filter. The basic advantage of the new circuit is its easy tuning by using the amplifier output impedances and/or extra resistors. Introduction:The superior properties of film bulk acoustic resonators (FBARs) make them promising components for making high performance monolithic filters for wireless applications [1 -3]. Two basic architectures are used so far for FBAR filters: ladder and lattice (Fig. 1). The passband central frequency in both cases is defined by the resonance frequencies of the devices: in the ladder circuits -by the series resonance of the series FBARs X a and parallel resonance of the shunt FBARs X b , which must be approximately equal; in lattice circuit -by the series resonance of longitudinal FBARs X a and parallel resonance of the crossed FBARs X b (which also should be equal). In both cases, a high accuracy for the resonance frequencies is required [3,4] for exact positioning of the filter central frequency. This Letter proposes a new circuit which helps to relax this requirement so that the adjustment of the central passband frequency can be achieved by means of the remaining circuit elements.

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Novel VCO Architecture Using Series Above-IC FBAR and Parallel LC Resonance

Cited by 40 publications

References 18 publications

The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

Sputtered AlN Thin Films for Piezoelectric MEMS Devices - FBAR Resonators and Accelerometers

Easily adjustable FBAR filter circuit

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