Sputtered AlN Thin Films for Piezoelectric MEMS Devices - FBAR Resonators and Accelerometers

Gerfers, Friedel; Kohlstadt, Peter M.; Ginsburg, E.; He, Ming; Samara-Rubio, Dean; Manoli, Yiannos

doi:10.5772/6887

Cited by 12 publications

(7 citation statements)

References 23 publications

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“…Compatibility with complementary metal–oxide–semiconductor (CMOS) processing made AlN very attractive for realization of micro-electro-mechanical system (MEMS) sensors like accelerometers [ 18 , 19 ], gyroscopes [ 20 ], piezoelectric microphones for aircraft fuselage noise sources identification [ 21 ], or for implantable hearing aid applications [ 22 ]. AlN-based pressure, temperature and 3-axis acceleration sensors integrated on a single chip were recently attempted [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

et al. 2017

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Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

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Section: Introductionmentioning

confidence: 99%

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

et al. 2017

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“…Most common applications include MEMS, particularly surface acoustic wave (SAW) devices. There are numerous books and original papers devoted to the application of AlN thin films SAW devices [201][202][203][204][205][206][207][208][209]. Therefore, we will briefly mention the basic principles related to AlN thin films deposition and the characteristics of devices.…”

Section: D Aln Thin Films (Tfs)mentioning

confidence: 99%

“…Using longitudinal (d33 mode) and transverse (d31 mode) piezoelectric effects, Gerfers et al [203] prepared two kinds of piezoelectric MEMS devices, surface-micromachined resonators and bulk-micromachined accelerometers. This approach provided a potential solution for integrating multiple frequency FBAR filters of adjacent bands or frequency trimming.…”

Section: Application Of Aln Nanostructures (Nss)mentioning

confidence: 99%

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

Nersisyan

Lee

Kim

et al. 2019

International Materials Reviews

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Recent developments have seen breakthroughs in zero-, one-, two-, and three-dimensional AlN micro-and nanostructures, such as nanoparticles, nanowires, nanotubes, thin films and 3D multifold symmetry crystals. The attractive electrical, optical, and thermal properties of AlN make these materials irreplaceable for microelectrochemical systems (MEMS), surface acoustic waves (SAWs) and light emitting diodes (LED). The significant interest in the field of AlN nanostructure synthesis and application encouraged us to summarise the reported data to better understand the physical and chemical aspects of AlN crystal growth processes. Four main topics are covered in this review article: (1) the morphological diversity of AlN nanoand microstructures; (2) formation mechanisms and growth dynamics; (3) theoretical simulation of growth processes based on density functional theory (DFT) and phase field (PF) modelling approaches; (4) application and devices. This article also provides a perspective on future research relevant to AlN micro-and nanostructures.

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“…The film bulk acoustic resonator (FBAR) is a sandwich structure consisting of metal electrode/piezoelectric layer/metal electrode; frequency regulation can be realized through the inverse piezoelectric effect of piezoelectric film [ 1 ], and a cavity is formed between the silicon wafer and the lower electrode [ 2 ]. As an ultra-wide bandgap semiconductor material, AlN has excellent piezoelectric properties, high acoustic surface wave rate, and a large electromechanical coupling coefficient, so it is often selected as the piezoelectric material of FBAR [ 3 ]. With the development of semiconductor technology, the excellent radio frequency (RF) characteristic of high-resistance silicon (HR-Si) is gradually discovered.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss

Zou

Huang³

et al. 2023

Micromachines

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When AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases.

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Sputtered AlN Thin Films for Piezoelectric MEMS Devices - FBAR Resonators and Accelerometers

Cited by 12 publications

References 23 publications

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling

The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss

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