“…Thus, it is possible to see 3D space position of the certain grain orientations. Further, analysis of such plots is presented elsewhere [14] . Fig.…”
“…Thus, it is possible to see 3D space position of the certain grain orientations. Further, analysis of such plots is presented elsewhere [14] . Fig.…”
“…In this case, 4.83 M potassium hydroxide and 1.89 M Isopropyl Alcohol were used at a temperature of 80 ± 5°C. For NaOCl-based etching, ( NaOCl/KOH/IPA/DI water ), 1.06 M sodium hypochlorite, 1.61 M potassium hydroxide, and 1.9 M isopropyl alcohol were used at a temperature of 80 ± 5°C, and the NaOCl acts as an oxidising agent in the etching process and helps in improving the etching rate [25,26]. UV-Visible spectroscopy (SHIMADZU-2600, Japan) analysis was carried out before and after the etching process to study the variation of reflectance.…”
In the current work, we studied the influence of surface modification on reflectivity and minority carrier lifetime of mc-Si wafer taken from ingot grown by DS process. Two etchants combination namely, KOH/IPA/DI water, and NaOCl/KOH/IPA/DI water are used for different time durations. Reflectance and minority carrier lifetime vary significantly for both etchants used in this work. Optimised micro pyramidal structure formation will aid in enhancing the total internal reflection thereby increasing light absorption. Increase in minority carrier lifetime will be helpful in increasing the efficiency of solar cell. In order to establish the effect of etching on reflectivity of wafers, Al-doped ZnO was sputtered on etched surface and reflectivity was found to decrease further as observed from the reflectivity spectrum. I-V measurements were carried out on Ag/Ti/AZO/mc-Si/Ag and effect of etching on contact behaviour was observed. AZO-coated Si surface with optimised surface micro pyramids served as a good antireflection layer..
“…However, their vast application in the industry is hindered by the high cost of instrumentation. Wet chemical etching [13,14] can fabricate SiNWs with low-cost alternatives, but it is prone to isotropic etching, and the qualities of SiNWs can be influenced by the etching solution's concentration and composition. MaCE plays an essential role in the preparation of SiNWs due to its simplicity, versatility, and cost-effectiveness compared with other etching methods.…”
In this work, we design a micro-vibration platform, which combined with the traditional metal-assisted chemical etching (MaCE) to etch silicon nanowires (SiNWs). The etching mechanism of SiNWs, including in the mass-transport (MT) and charge-transport (CT) processes, was explored through the characterization of SiNW’s length as a function of MaCE combined with micro-vibration conditions, such as vibration amplitude and frequency. The scanning electron microscope (SEM) experimental results indicated that the etching rate would be continuously improved with an increase in amplitude and reached its maximum at 4 μm. Further increasing amplitude reduced the etching rate and affected the morphology of the SiNWs. Adjusting the vibration frequency would result in a maximum etching rate at a frequency of 20 Hz, and increasing the frequency will not help to improve the etching effects.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
