2019
DOI: 10.1016/j.mssp.2019.104646
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Novel sputtering method to obtain wide band gap and low resistivity in as-deposited magnesium doped zinc oxide films

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Cited by 11 publications
(7 citation statements)
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“…Many groups have reported the influence on ZnO thin films of metal dopants, including In [10], Al [11][12][13][14], Fe [12,15], Mn [16], Mg [17], and Ga [12,18], to replace indium-doped tin oxide or fluorine-doped tin oxide [1,3]. One promising dopant is Cu, which has been reported to show enhanced properties such as higher conductivity [19], diluted magnetic properties [15], and improved crystal quality [20].…”
Section: Introductionmentioning
confidence: 99%
“…Many groups have reported the influence on ZnO thin films of metal dopants, including In [10], Al [11][12][13][14], Fe [12,15], Mn [16], Mg [17], and Ga [12,18], to replace indium-doped tin oxide or fluorine-doped tin oxide [1,3]. One promising dopant is Cu, which has been reported to show enhanced properties such as higher conductivity [19], diluted magnetic properties [15], and improved crystal quality [20].…”
Section: Introductionmentioning
confidence: 99%
“…The crystallite size of WZ-MZO was estimated to be ∼4.7 nm. In addition, the WZ-MZO peaks slightly shift to the higher angle side, implying a reduced lattice constant because of part of Zn replacement with Mg (∼0.57 Å) in the ZnO lattice (∼0.60 Å). , No prominent diffraction peak related to the MgO phases is observed, revealing that Mg should be incorporated into the ZnO matrix rather than the formation of the MgO phase. On the other hand, XRD of MZO prepared with the other base TMAH shows characteristic diffraction peaks of the ZB structure at ∼33.4, 38.8, and 56.6°, suggesting that the major phase of the product is ZB MZO (named ZB-MZO) (pink curve).…”
Section: Resultsmentioning
confidence: 99%
“…The first excitonic absorption peaks of both WZ-and ZB-MZO blueshift and are slightly broadened. 28 The band gaps of ZnO, WZ-MZO, and ZB-MZO are 3.20, 3.50, and 3.55 eV, respectively, according to the corresponding Tauc plot in Figure S2b. On the other hand, PL spectra of samples exhibit a sharp and a broad peak, generally assigned to the band-edge emission (∼370 nm, E g = 3.35 eV) and defect-related deep-level emission (∼569 nm, E g = 2.18 eV), respectively.…”
Section: Preparation Of Mzo Nps In Cubic and Hexagonal Wz Structuresmentioning
confidence: 99%
“…[ 146 ] Unfortunately, the device efficiency of the organic/inorganic PSCs is hampered with the use of ZnO ETL due to its decomposition into PbI 2 , which results in the reaction between MA + and the remaining hydroxyl groups at the interface. [ 147,148 ] Fortunately, ZnO has shown advantageous results for inorganic PSCs and can be used at low annealing temperature. ZnO has been introduced as an ETL owing to its well‐matched energy level with CsPbI 2 Br as well as its higher transparency and electron mobility as compared with the TiO 2 and SnO 2 ETLs.…”
Section: Cspbi2br Pscsmentioning
confidence: 99%