Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

Mizuno, T.; Mizoguchi, N.; Tanimoto, K.; Yamauchi, Takahira; Tezuka, T.; Sameshima, Toshiyuki

doi:10.7567/ssdm.2009.a-4-2

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“…12) In this work, we have experimentally studied a new abrupt source-heterojunction structure with lateral relaxed/strained semiconductor layers consisting of a single semiconductor. 13) Namely, these new source heterojunctions can be easily formed by local O þ ion implantation-induced relaxation effects of strained substrates. Moreover, the source conduction and the valence band offsets for n-and p-MOSs can be realized by lateral source-relaxed Si/channel Si with a tensile strain and source-relaxed SiGe/channel SiGe with a compressive strain, respectively.…”

Section: Introductionmentioning

confidence: 99%

New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal–Oxide–Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices

Mizuno

Mizoguchi

Tanimoto

et al. 2010

Jpn. J. Appl. Phys.

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We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary metal-oxidesemiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O þ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without polycrystallizing the semiconductor layers, by optimizing O þ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets ÁE C and ÁE V can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channelstrained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing ÁE C. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

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Section: Introductionmentioning

confidence: 99%