2005
DOI: 10.1016/j.synthmet.2005.07.151
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Novel Regiospecific MDMO-PPV Polymers with Improved Charge Transport Properties for Bulk Heterojunction Solar Cells

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Cited by 16 publications
(10 citation statements)
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“…Poly( p ‐phenylene vinylene)s (PPVs) are fascinating materials in particular because of their semiconductor characteristics . Plenty of synthetic approaches have been conceived to get best‐performing materials for, e.g., applications in organic electronics.…”
Section: Introductionmentioning
confidence: 99%
“…Poly( p ‐phenylene vinylene)s (PPVs) are fascinating materials in particular because of their semiconductor characteristics . Plenty of synthetic approaches have been conceived to get best‐performing materials for, e.g., applications in organic electronics.…”
Section: Introductionmentioning
confidence: 99%
“…The presence of DMF has made it possible to prepare these adducts routinely and in reasonably high yields without the need to generate the intermediate radicals. Electrochemical studies of the prepared adducts showed that the reduction potentials can be conveniently tuned and that poly-additions enhance the solubility and cathodically shift the first reduction potential, thus, bringing the LUMO level closer to that of the typical donor polymers, such as poly-3-hexylthiophene (P3HT) [30] or MDMO-PPV [31] .…”
Section: Introductionmentioning
confidence: 99%
“…The latter conclusion is clearly supported by our PL studies presented in Figure 2b demonstrating that PL band responsible for the aggregates in PTCDI-C5 is shifted by 0.13 eV with respect to non-aggregated PL. In other words, aggregates act as traps for charge carriers as their energetic is favorable for that and thermal excitation of the charge-carriers back to amorphous region require overcoming energetic barrier formed by the mismatch in the corresponding HOMO/LUMO levels [50]. The latter is just responsible for the structure-related trap with depth of E charge trap = 0.3 eV observed in our TSL experiment.…”
Section: Tsl Data Analysismentioning
confidence: 72%