Novel reactor for high volume low-cost silicon epitaxy

Ban, Vladimir S.

doi:10.1016/0022-0248(78)90420-7

Cited by 38 publications

(19 citation statements)

References 9 publications

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“…Energy conservation equations.--The temperature field in this system can be solved from the differential thermal energy balance equation, which has the following form (14) 0 (pCpv~T) + a a~-~ (pC~v~T) [5] where Cp and k are the heat capacity and the thermal conductivity of the gas mixture, respectively. Normally, the boundary conditions would entail specifying the temperatures at the bounding surfaces, but a more general expression allowing for "slip" is appropriate for high or intermediate values of the Knudsen numbers, which will take the following form (15) Here Pr is the Prandtl number and A is the accommodation coefficient (0 < A < 1), which characterizes the interaction of the fluid with a surface (15).…”

Section: Formulationmentioning

confidence: 99%

“…Here, the initial efforts of Eversteyn (3), postulating a stagnant film concept, have been extended by Ban and Gilbert (4,5) in allowing for two-dimensional flows and boundary layer concepts, involving both analysis and measurements.…”

mentioning

confidence: 99%

“…In contrast to the relatively simple CSTR model proposed by Turban et al for PECVD systems, a great deal of very useful and much more sophisticated modeling work has been done on CVD systems in general. Here, the initial efforts of Eversteyn (3), postulating a stagnant film concept, have been extended by Ban and Gilbert (4,5) in allowing for two-dimensional flows and boundary layer concepts, involving both analysis and measurements.…”

mentioning

confidence: 99%

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The Analysis of Plasma‐Enhanced Chemical Vapor Deposition of Silicon Films: A Comparison of Predictions with Measurements

Rhee

Szekely

1986

J. Electrochem. Soc.

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A general mathematical representation has been developed for plasma-assisted CVD systems. In this formulation, allowance is made for fluid flow, slip at the interface, and for both the thermal and plasma-assisted decomposition of the reactant gas. The use of the model is illustrated with a specific example: the decomposition of silane to give a silicon film. The theoretical predictions were found to be in reasonable agreement with the measurements.In recent years, there has been a growing interest in the production of single crystalline, polycrystalline, and amorphous silicon films by plasma-enhanced chemical vapor deposition at low pressures (1, 2). In essence, these operations involve the decomposition of silane in a glow discharge at pressures typically ranging from 0.01 to 1 torr and over the temperature range of 250~176 In investigating these systems, the principal attention has been focused on the electrical and the structural characterization of the deposits, and relatively little attention has been paid to the chemical reaction engineering aspects of this problem. A notable exception has been the work of Turban et al.(1) who have reported extensive measurements on silicon deposition in glow discharges. They interpreted their kinetic data using a CSTR continuous flow stirred tank reactor (CSTR) model, which in essence postulates the spatial uniformity of the reactant concentration within the system. While this was un~ doubtedly a very useful first step, the technique was essentially interpretive rather than predictive.In contrast to the relatively simple CSTR model proposed by Turban et al. for PECVD systems, a great deal of very useful and much more sophisticated modeling work has been done on CVD systems in general. Here, the initial efforts of Eversteyn (3), postulating a stagnant film concept, have been extended by Ban and Gilbert (4, 5) in allowing for two-dimensional flows and boundary layer concepts, involving both analysis and measurements.Interesting two-dimensional transport models (in the absence of plasma effects) have also been proposed by Fujii et al. (6), Manke and Donaghey (7), Juza and Cermak (8), and Takahashi et al. (9). A good review of this earlier work has been presented by Jensen (10).While most of the CVD modeling work was based on the assumption that the actual deposition reaction took place at the surface, an interesting, recent model by Coltrin et al. (11) did make an allowance for homogeneous reaction kinetics for a rather complex system. Finally, more complex surface kinetics have been represented in a recent paper by Jensen and Graves (12).Thus, the current state of modeling CVD systems may be summarized by stating that, while a good level of understanding exists of the coupling between transport and kinetic phenomena in ordinary CVD processes, our level of understanding of these phenomena in plasmaenhanced CVD systems is much less satisfactory. The purpose of the work to be described in this paper is to develop a general formulation describing the transport and the kinetic ...

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Section: Formulationmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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The Analysis of Plasma‐Enhanced Chemical Vapor Deposition of Silicon Films: A Comparison of Predictions with Measurements

Rhee

Szekely

1986

J. Electrochem. Soc.

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“…For this purpose, one of the best methods is to develop and use a stacked-type multi-wafer reactor, [1][2][3][4][5][6][7][8] which contains more than 100 silicon substrate pieces vertically or horizontally arranged like an oxidation furnace. However, the wafer-to-wafer uniformity of the epitaxial film thickness is empirically known as a subject that can be improved.…”

Section: Introductionmentioning

confidence: 99%

Silicon Epitaxial Growth Rate and Transport Phenomena in a Vertical Stacked-Type Multi-Wafer Reactor

Habuka¹,

Tsuji²

2012

Jpn. J. Appl. Phys.

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The silicon epitaxial growth rate in a trichlorosilane-hydrogen system using a vertical stacked-type multi-wafer reactor, having more than 100 substrate pieces, together with two horizontal gas inlet nozzles for each substrate, was studied by means of numerical calculations. In this study, the authors developed a compact model that consisted of the minimal set of reactor parts, by taking into account the gas flow condition around the stacked susceptors. Because the direction of the gases horizontally injected to the substrate is bent by the gas flowing downward along the stacked susceptors, a part of the horizontally injected gas in the downstream positions is forced to directly go to the exhaust, and not to the substrate. The wafer-to-wafer uniformity of epitaxial thickness is expected to be improved by means of finely adjusting the susceptor position, particularly at the downstream positions. #

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“…Some proposals of high throughput CVD reactors have been made in the past [3,4]. Luque et al [5] patented a high throughput epitaxial reactor of up to 250 wafers per batch, the so-called stacked susceptor epitaxial reactor (SER).…”

Section: Introductionmentioning

confidence: 99%