Gas recycling in a stacked susceptor epitaxial reactor

Ĺuque, A.; Rodríguez, Hugo H.; Tobias, Irwin; Alonso, J.

doi:10.1016/j.jcrysgro.2005.05.039

Cited by 4 publications

(4 citation statements)

References 6 publications

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“…Even though the Si deposition reaction taking place on the rod surface is assumed to be a two-step reaction [13,16], it can be simplified as follows [17]:…”

Section: Power Reaction Estimationmentioning

confidence: 99%

Temperature homogeneity of polysilicon rods in a Siemens reactor

Coso

Tobias

Cañizo

et al. 2007

Journal of Crystal Growth

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“…Even though the Si deposition reaction taking place on the rod surface is assumed to be a two-step reaction [13,16], it can be simplified as follows [17]:…”

Section: Power Reaction Estimationmentioning

confidence: 99%

Temperature homogeneity of polysilicon rods in a Siemens reactor

Coso

Tobias

Cañizo

et al. 2007

Journal of Crystal Growth

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“…Even though the Si deposition reaction taking place on the rod surface is assumed to be a two-step reaction [8], it can be simplified as follows [9]:…”

Section: A Power Reaction Estimationmentioning

confidence: 99%

Increase on Siemens Reactor Throughput by Tailoring Temperature Profile of Polysilicon Rods

Coso

Cañizo

Tobias

et al. 2007

2007 Spanish Conference on Electron Devices

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Siemens process productivity can be limited by non homogeneous temperature profile in polysilicon rods. To overcome this limitation high frequency current sources have been proposed. An analysis is presented which, based on electromagnetic and heat transfer theory, studies temperature and current density profiles within the rods. Two linked differential equations have been numerically solved by use of non-linear methods. The solution of these equations shows that by means of an increase in current frequency, skin effect takes place, heat generation in the inner part of the rod is decreased and therefore temperature homogeneity increases. The effect of high frequency current sources in the rod stability is also analyzed, and it can be derived that resonance problems could appear.

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“…This work is included within the EPIMETSI European research project, which has the objective of developing solar cells on thin epitaxial layers grown over upgraded metallurgical silicon with a high throughput epitaxial reactor of novel design [1,2]. This reactor can be fed with electronic grade source gases or with gases obtained in situ from metallurgical silicon (MG Si).…”

Section: Introductionmentioning

confidence: 99%

“…The EPIMETSI project is divided into the following tasks: (1) upgrading metallurgical silicon to a level suitable for epitaxial cell substrates; (2) designing and demonstrating a prototype of a high throughput epitaxial reactor; (3) designing and demonstrating a prototype of re-circulation and synthesis of pure gases for the epitaxial growth; (4) developing an appropriate fabrication processing for epitaxial cells; (6) conducting manufacturability studies in a factory environment and; (7) And carrying out a cost and market analysis.…”

Section: Introductionmentioning

confidence: 99%

Industrial implementation of epitaxial solar cells over low-grade silicon substrates

Caballero

Sánchez-Friera

Vázquez

et al.

MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference

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Many efforts are being dedicated to the search of alternative substrates for solar cells, due to the shortage of silicon feedstock that the photovoltaic industry is currently facing. One possible solution for this problem is to use low-cost silicon substrates, as for instance metallurgical silicon, for which there are no supply issues, taking these substrates as a holder of a high quality epitaxially grown silicon layer where solar cell can be built. An industrial solar cell process for this new type of structures has been developed at IMEC and implemented with factory equipments at the facilities of Isofotón. The main difference with respect to a standard cell process is the need to reach a good light confinement into the epitaxial layer to maximize cell output power by the increase of photon absorption in the high quality silicon layer.Efficiencies of over 9% have been achieved in an industrial environment. From laboratory scale results an increase in industrial cell efficiency up to 12% is foreseen.

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Gas recycling in a stacked susceptor epitaxial reactor

Cited by 4 publications

References 6 publications

Temperature homogeneity of polysilicon rods in a Siemens reactor

Temperature homogeneity of polysilicon rods in a Siemens reactor

Increase on Siemens Reactor Throughput by Tailoring Temperature Profile of Polysilicon Rods

Industrial implementation of epitaxial solar cells over low-grade silicon substrates

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