Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

Dasgupta, Sagnik; Ok, Young-Woo; Upadhyaya, Vijaykumar; Choi, Wookjin; Huang, Ying-Yuan; Duttagupta, Shubham; Rohatgi, A.

doi:10.1109/jphotov.2022.3196822

Cited by 7 publications

(1 citation statement)

References 24 publications

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“…It is known as "etch stop" [31]. Therefore, in the etching recipe, we adjusted the etching bias power and reduced the flow ratio of carbon-based gas, thereby reducing the polymer generation during the etching process and preventing the etching from self-stopping effectively [32].…”

Section: Aprocess Flowmentioning

confidence: 99%

Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device

Yu,

Shao,

Chen

et al. 2024

IEEE J. Electron Devices Soc.

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The design of LDMOS (Lateral double diffused metal oxide semiconductor) devices with CFP (Contact field plate) has been of great significance in recent years, according to its advantages of low resistance and high switch efficiency. In this paper, this ultra-low , (Specific on-resistance) LDMOS device is simulated, designed, and fabricated. The effects on FOM (Figures-of-merits) characters from physical dimensions, including field plate length L, field plate thickness H, and slot contact width W, have been analyzed and discussed. The best device structure is proposed through simulation, and a related fabrication process is introduced correspondingly. Finally, the electrical measurement results show that , can achieve as low as 6.9m•mm 2 when the source-drain (Breakdown voltage) arrives at 34.1V, which is improved by 47.1% compared with conventional devices. Furthermore, the TLP (Transmission line pulse) test results indicate that the device owns an ideal SOA (Safe operation area) from both typical devices (W=10 m) and very large devices (W= 2mm). Index Terms-Contact field plate (CFP), Figures of merits (FOM), Lateral double diffusion metal oxide semiconductor (LDMOS), Specific on-resistance ( , )

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Section: Aprocess Flowmentioning

confidence: 99%

Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device

Yu,

Shao,

Chen

et al. 2024

IEEE J. Electron Devices Soc.

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Electrical Performance, Loss Analysis, and Efficiency Potential of Industrial‐Type PERC, TOPCon, and SHJ Solar Cells: A Comparative Study

Wang,

Guo,

et al. 2024

Progress in Photovoltaics

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Currently, the efficiency of p‐type passivated emitter and rear contact (PERC) cells has been growing at an absolute efficiency of 0.5% per year and has reached 23%–23.5% in mass production while getting closer to its theoretical efficiency limit. n‐Type tunnel oxide passivated contact (TOPCon) and silicon heterojunction (SHJ) cells with their superior “passivating selective contacts” technology were the most interesting photovoltaics (PV) technology in the industry. The effect of different passivated contact layers with respect to their influence on the J0, J0,metal, ρc, and the carrier selectivity (S10) and the loss analysis and efficiency potential of industrial‐type PERC, TOPCon, and SHJ solar cells were studied and compared. The results showed that TOPCon structure with a high passivation performance and good optical performance is more suitable for bifacial solar cell and the highest theoretical limiting efficiency with metal shading on the n‐type Si wafer (ηb,e,h,m,max) can be achieved to 27.62%. Although SHJ structure with the highest passivation performance but the worst optical performance owing to the parasitic absorption of a‐Si:H layer and high contact resistivity, the value of ηb,e,h,m,max is 0.7% lower than that of TOPCon solar cells. PERC structure has superior optical performance than SHJ structure, but due to poor passivation performance, the ηb,e,h,m,max is only 26.42%. The next‐generation products may be heterojunction back‐contact (HBC) and TOPCon back‐contact (TBC) cells with high ηb,e,h,m,max of 28.12% and 27.99%, respectively. Exploiting a perfect passivation of the noncontact area, the wide process window and low cost are required and transferring these new concepts to industrial solar cell production will be the next major challenge.

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Design, development and analysis of large-area industrial silicon solar cells featuring a full area polysilicon based passivating contact on the rear and selective passivating contacts on the front

Padhamnath

Choi

Luna

et al. 2023

Solar Energy Materials and Solar Cells

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Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

Cited by 7 publications

References 24 publications

Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device

Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device

Electrical Performance, Loss Analysis, and Efficiency Potential of Industrial‐Type PERC, TOPCon, and SHJ Solar Cells: A Comparative Study

Design, development and analysis of large-area industrial silicon solar cells featuring a full area polysilicon based passivating contact on the rear and selective passivating contacts on the front

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