Novel Precursor for Development of Si–C₂H₄–Si Networks in SiCH for Application as a Low-k Cap Layer beyond 22 nm Nodes

Abstract

The primary x-ray diagnostic lines in He-like ions are mainly excited by electron impact from the ground level to the n = 2 levels, but at high temperatures n > 2 levels are also excited. In order to describe the atomic processes more completely, collision strengths are computed for O VII including for the first time all of the following: (i) relativistic fine structure, (ii) levels up to n = 4, and (iii) radiation damping of autoionizing resonances. The calculations are carried out using the Breit-Pauli R-matrix method with a 31-level eigenfunction expansion. Resonance structures in collision strengths are delineated in detail up to the n = 4 thresholds. For highly charged He-like ions radiation damping of autoionizing resonances is known to be significant in certain energy ranges. We investigate this effect in detail and find that while resonances are discernibly damped radiatively as the series limit n → ∞ is approached from below, the overall effect on effective cross sections and rate coefficients is found to be very small. Collision strengths for the principal lines important in xray plasma diagnostics, w, x, y and z, corresponding to the four transitions to the ground level 1s 2 ( 1 S 0 ) ←− 1s2p( 1 P o 1 ), 1s2p( 3 P o 2 ), 1s2p( 3 P o 1 ), 1s2s( 3 S 1 ), are explicitly shown. Significant differences are found with previous works for several transitions. The contribution from the resonances converging to the levels from the complex n = 4 is found to be significant for some transitions and can increase the rate by a factor of four. This work is carried out as part of the Iron Project-RmaX Network.

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

“…403 Using similar precursors, 100 nm a-SiC:H films with k values as low as 3.1 that show Cu diffusion barrier performance equivalent to higher k = 5.0 a-SiCN:H have also been demonstrated. 402,404 Matsuda has also shown that similar a-SiC:H films can exhibit increased fracture strength due to increased crack tip plasticity arising from the more ductile -(CH 2 ) x -bonding. 406 The combination of such ductile films with traditional low-k a-SiOC:H ILDs was also found to significantly improve the interfacial toughness of the underlying ILD/DB interface.…”

“…[402][403][404][405] Shimizu's results using precursors such as 1,1-divinyl silacyclopentane (DVScP) and 5-silaspiro- [4,4]-nonane (SSN) have shown that a-SiC:H films with a significant improvement in mass density can be achieved for a given dielectric constant relative to a-SiC:H films deposited using traditional tetramethylsilane (4MS) precursors. 403 Using similar precursors, 100 nm a-SiC:H films with k values as low as 3.1 that show Cu diffusion barrier performance equivalent to higher k = 5.0 a-SiCN:H have also been demonstrated.…”

Pore morphology of low-k SiCxNy films prepared with a cyclic silazane precursor using plasma-enhanced chemical vapor deposition

“…Still, some of the cyclic N\ \Si\ \N bonds were opened and broken into the small fragments such as -Si-N- [14]. Moreover, during the plasma deposition process, the vinyl side-groups in VSZ could be readily activated and reacted to form the long organic chain, such as Si-(CH 2 ) n -Si and/or Si-(CH 2 ) n -CH 3 [14,26,27]. Meanwhile, it probably also reacted with the fragment of -Si-N-to form the N-Si-C cross-linked structures.…”

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

“…Thin a-SiC can be used as diffusion barrier, passivation layer and a barrier layer, eg within the structure of amorphous silicon solar cells. This alloys shows to be promising also as both, etch stop [9,10] and hard mask layer [11] to assist nanoelectronic patterning, and as low dielectric constant (known as low-k) interfacial dielectric material [12], diffusion barrier [13][14][15], and pore sealants [16]. Controllability of the band gap allows a wide range of applications especially in microelectronics, including thin dielectric layers and semiconductor applications.…”