Novel Porous Films Having Low Dielectric Constants Synthesized by    Liquid Phase Silylation of Spin-On Glass Sol for Intermetal Dielectrics

Aoi, Nobuo

doi:10.1143/jjap.36.1355

Cited by 41 publications

(11 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Various low-materials, such as hydrogensilsesquioxane 1,2 and methylsilsesquioxane spin-on-glasses ͑SOG͒, 2,3 fluorine doped silicon oxide, 4,5 and fluorinated amorphous carbon, [6][7][8] have been proposed, and their application to multilevel interconnections were reported. 10,11 Silicate-based porous materials are very attractive because of their potential compatibility with conventional Si technology. 10,11 Silicate-based porous materials are very attractive because of their potential compatibility with conventional Si technology.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen plasma exposure of porous spin-on-glass films

Kondoh

Asano

Nakashima³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Hydrogen plasma effects on ultralow-k porous SiCOH dielectrics J. Appl. Phys. 98, 074502 (2005); 10.1063/1.2060935Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature J.Hydrogen-methyl-siloxane-based porous spin-on-glass films were exposed to an oxidative plasma. The plasma exposure resulted in the loss of hydrophobic groups such as Si-H and Si-CH 3 . The formation of silanole groups, the decrease in film thickness, and moisture uptake were also observed. When the substrate was biased during exposure, these tendencies were found to be suppressed.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of oxygen plasma exposure of porous spin-on-glass films

Kondoh

Asano

Nakashima³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…For instance, from the combination of different fibers or fillers with polymer matrices one can produce polymer-matrix composites, a material important to the electronic industry for its dielectric properties in the use of capacitors [5][6][7]. The effective utilization of filled polymers depends strongly on the ability to disperse the fillers homogeneously throughout the matrix [8].…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties of Industrial Polymer Composite Materials

Ali¹,

Noori²,

Hussin³

2010

JNUS

View full text Add to dashboard Cite

Frequency and temperature dependence of dielectric constant ( ) and di el ectric loss ( ) i n pure epoxy resin and polymer composites with glass fiber are studied in the frequency range 40Hz-110 MHz and in the temperature range 0 C.The experimental results show that and increased with the addition of glass fiber in epoxy resin. The value of ( ) decreased with increasing frequency which indicates that the major contribution to the polarization comes from orientation polarization .Dielectric loss peaks were also observed in the composite materials at high temperature due to Tg of epoxy .The value of ( ) increased with increasing temperature, and is due to greater freedom of movement of the dipole molecular chains within the epoxy at high temperature.

show abstract

“…Even though there are still thermal decomposition problems for some of the materials at an elevated temperature, 5 these materials usually show better thermal and mechanical performance than purely organic materials at the processing temperatures near 450°C which are required for interconnect technology. [6][7][8] While these materials offer dielectric constants in the range of 2 Ͻ k Ͻ 3, ultra low-k materials ͑k Ͻ 2.0͒ are required for sub-65 nm technology. Some would argue that thermal processing of spin-cast materials is an approach more extendible to highly porous low-k structures, so that lower effective k values can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Thin-film transformations and volatile products in the formation of nanoporous low-k polymethylsilsesquioxane-based dielectric

Lazzeri

Vanzetti

Anderle

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inThe effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applicationsThe thermal transformation of spin-cast thin films to produce nanoporous low-k dielectric layers has been investigated using polymethysilsesquioxane ͑PMSSQ͒ for the low-k matrix and polymethylmethacrylate-co-dimethylaminoethylacrylate ͑PMMA-co-DMAEMA͒ as the porogen which is volatilized to leave nanopores in the matrix. Surface analysis methods, including time of flight-secondary ion mass spectrometry and x-ray photoelectron spectroscopy, and thin film analysis by small-angle neutron scattering revealed the kinetics of matrix crosslinking, while thermal desorption mass spectrometry showed the evolution of gaseous reaction products from porogen and matrix during the complex chemical transformations which occur with thermal cycling from 100°C to 450°C. Matrix crosslinking occurs primarily at lower temperatures ͑100-225°C͒, while porogen diffusion and decomposition begins somewhat above 200°C, leading to phase separation which creates the final nanoporous structure. Since matrix and porogen reaction kinetics have some overlap, relative kinetics can be important: e.g., matrix crosslinking proceeds more rapidly for PMSSQ precursors with high Si-OH content cf. low SiOH content, with implications for the morphology of porogen-derived nanostructure. As surface species transform ͑matrix crosslinking͒ and disappear ͑porogen volatilization͒, their complements are seen in the gas phase as reaction and decomposition products. Porogen decomposition is ligand selective, in that the N-containing ligand of DMAEMA is volatilized at considerably lower temperatures ͑ϳ200°C͒ than that ͑ϳ400°C͒ for the remaining species ͑the PMMA ligand and the common backbone for both PMMA and DMAEMA͒.

show abstract

Novel Porous Films Having Low Dielectric Constants Synthesized by Liquid Phase Silylation of Spin-On Glass Sol for Intermetal Dielectrics

Cited by 41 publications

References 1 publication

Effect of oxygen plasma exposure of porous spin-on-glass films

Effect of oxygen plasma exposure of porous spin-on-glass films

Dielectric Properties of Industrial Polymer Composite Materials

Thin-film transformations and volatile products in the formation of nanoporous low-k polymethylsilsesquioxane-based dielectric

Contact Info

Product

Resources

About