Effect of oxygen plasma exposure of porous spin-on-glass films

Abstract

Hydrogen plasma effects on ultralow-k porous SiCOH dielectrics J. Appl. Phys. 98, 074502 (2005); 10.1063/1.2060935Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature J.Hydrogen-methyl-siloxane-based porous spin-on-glass films were exposed to an oxidative plasma. The plasma exposure resulted in the loss of hydrophobic groups such as Si-H and Si-CH 3 . The formation of silanole groups, the decrease in film thickness, and moisture uptake were also observed. When the substrate was biased during exposure, these tendencies were found to be suppressed.

Physical mechanisms of interaction of cold plasma with polymer surfaces

“…The plasma treatment creates a complex mixture of surface functionalities which influence physical and chemical properties of polymers, and results in a dramatic change in the wetting behaviour of the surface; this is true for both solid and liquid surfaces [7][8][9][10][11][12][13][14][15][16][17].…”

Extraction of effective dielectric constants and the effect of process damage of low-k dielectrics for advanced interconnects

“…Photo-resist stripping and wet cleaning were done to ensure polymer residue-free trenches. Oxidizing ashes in photo-resist stripping process are well known to deteriorate the properties of low-k films through carbon loss, silanol formation, water adsorption, and film densification [8,9]. In the formation of Cu metallization in these trenches involved are depositing a stack of 25 nm TaN barrier and 200 nm Cu seed layer by physical vapor deposition (PVD) in Applied Materials PVD/CVD Endura HP followed by 0.5 μm electrochemically plated (ECP) Cu layer.…”

Synthesis of Poly(methyl‐co‐trifluoropropyl)silsesquioxanes and Their Thin Films for Low Dielectric Application

“…The most stringent requirements as interlayer dielectrics are thermal stability to 450 8C, good mechanical stability, low moisture uptake, and good adhesion strength, etc. [7][8][9][10][11][12][13] Among low dielectric constant materials such as fluorine doped silicon oxide (SiOF), [14] organic polymers, [6,15,16] xerogels, [17] and spin-on glasses (SOGs), [18,19] SOG materials show good step planarizing properties in ultralargescale-integration (ULSI) circuits since the SOG process is simple and advantageous to both gap filling and planarization capabilities. [20] One of the promising SOG low-k materials is poly-(silsesquioxane) (PSSQ), which is either in use or under development.…”