Novel Planar Electrode Structure for High-Speed (>40 GHz) Electroabsorption Modulators

Abstract

We introduce a stochastic lattice gas model including two particle species and two parallel lanes, one of which comprises exclusion interaction and directed motion while the other shows no exclusion interaction and unbiased diffusion, thus mimicking a microtubule filament and the surrounding solution. At a high binding affinity to the filament, jam-like situations dominate the system's behaviour. We approximated the fundamental process of position exchange of two particles. In the case of a many-particle system, we were able to identify one regime in which the system is rather homogeneous with only small accumulations of particles and another regime in which a significant fraction of all particles accumulate in the same cluster. Numerical data indicate that this cluster formation will occur at all densities for large system sizes. Coupling of several filaments leads to an increased cluster formation as compared to the uncoupled system, suggesting that efficient bidirectional transport on onedimensional filaments relies on long-ranged interactions and track formation.

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

“…9) The detailed epitaxial structure and chip fabrication procedure have been reported elsewhere. 8,9) The typical threshold current of the fabricated devices is around 15 mA, with a side-mode-suppression-ratio (SMSR) over 45 dB at 45 mA. And the static extinction ratio is greater than 10 dB at À3 V bias.…”

“…To further reduce the capacitance due to the electrode pad, a thick layer of low-k dielectric layer is formed beneath the electrode of the modulator by adopting a self-aligned planarization procedure. 9) The detailed epitaxial structure and chip fabrication procedure have been reported elsewhere. 8,9) The typical threshold current of the fabricated devices is around 15 mA, with a side-mode-suppression-ratio (SMSR) over 45 dB at 45 mA.…”

Compound Semiconductor Based Integrated Devices

“…IEL integration scheme not only greatly simplifies the fabrication process of the device, but also avoids the oxidation of aluminium during device fabrication. To reduce capacitance of the device, a 2 µm-wide and 4-µm-deep high-mesa ridge waveguide structure is formed in the EA modulator section by ICP dry etching and a thick SiO2 layer is formed beneath the electrode by adopting a self-aligned planarization procedure [3]. The EA modulator section is cleaved to be 50 µm long, and its facet is AR coated.…”

Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB) Semiconductor Laser Above Threshold

“…LC-DFB lasers use a lithographic fabrication step to define the distributed feedback grating, avoiding subsequent regrowth. This makes this type of lasers not only easier to fabricate but also less expensive [2][3][4][5][6][7]. For the first time, this article reports on the stability of LC-DFB lasers against Spatial Hole Burning (SHB), maximum output power and Side Mode Suppression Ratio (SMSR) values above threshold conditions.…”