Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB) Semiconductor Laser Above Threshold

Abstract

In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

Improvement of Absorption and Emission Phenomena of 1.55µm Quantum Dot Laser using Indium Nitride

“…The mobility of the cladding layer is an important parameter, which affects the minority carrier leakage current. The mobility of the carrier is related to the momentum relaxation time by [5]:…”

“…Lasers fabricated from such an active layer exhibit higher device performance compared to the traditional semiconductor lasers based on bulk or Quantum Well (QW), or Quantum Wire (QWR) active medium. Improvements in Quantum Dot Laser (QDL) performance have appeared in wide modulation bandwidth, relative noise intensity, minimum lasing threshold, output power temperature sensitivity, reduced linewidth enhancement factors, reduced crosstalk between amplified signals at low power level, and improved four-wave mixing at high power levels and longer device lifetime [2][3][4][5]. Currently, the absorption properties of QDL such as effective density of state, carrier density at the threshold, level of optical feedback, rate of change of mobility of carriers, and emission properties have become the focus of numerous theoretical and experimental investigations for further improvement [3,6].…”

“…The growth technique is very vital as the operating wavelength of the laser varies with the active layer thickness. The wavelength variations and tenability of the device are estimated to be about 0.15nm [5].…”

A Realization of Stabilizing the Output Light Power from a Laser Diode: A Practical Approach

“…Chughtai: A Realization of Stabilizing the Output Light Power from a Laser Diode optical power output. Authors in [17] studied a semiconductor laser using simulations to determine various parameters in relation to laser structure hence observing maintenance of output parameters at certain structural measurements. Authors in [18] discussed a CO 2 stabilized laser in cutting processes and they carried out a discussion validated by the Analysis Of Variance (ANOVA).…”