Novel organic semiconductor materials combined by sumanene and corannulene: Rational functionalization based on the electronic structures of highly curved buckybowl

Pu, Xin; Bai, Fu‐Quan

doi:10.1016/j.molstruc.2023.136127

Cited by 4 publications

(1 citation statement)

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“…1. [11][12][13][14][15][16]17) The metal-insulatormetal (MIM) devices with a sumanene-inserted bilayer graphene show huge (I ON /I OFF ∼ 150) resistive switching characteristics, as demonstrated by this unique feature. 18,19) However, the reason resistive switching occurs in the graphene/sumanene/graphene structure has not been clarified yet.…”

Section: Introductionmentioning

confidence: 99%

Stacked structure dependence on resistive switching characteristics in sumanene molecular memory

Kawai,

Ashihara,

Ishikawa

et al. 2024

Jpn. J. Appl. Phys.

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Nonvolatile memories using molecular (molecular memories) are attracting attention. This is because these materials are suitable for miniaturization and higher capacity of memories in terms of the properties and dimensions. We have already demonstrated that the MIM devices with sumanene-inserted bilayer graphene show1) huge resistive switching characteristics. However, the reason why the resistive switching occurs in graphene / sumanene / graphene structure has yet to be clarified. In this work, to investigate the mechanisms for resistive switching phenomenon in sumanene-inserted bilayer graphene, the plural kinds of stacked MIM structures are fabricated and evaluated. As a results, the measurement results clearly show that the graphene / sumanene / graphene structure is indispensable for resistive switching phenomenon. Furthermore, based on the temperature dependence of the resistive switching, it is confirmed that a significant ION/IOFF ratio can be obtained at higher operation temperatures.

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