Stacked structure dependence on resistive switching characteristics in sumanene molecular memory

Abstract

Nonvolatile memories using molecular (molecular memories) are attracting attention. This is because these materials are suitable for miniaturization and higher capacity of memories in terms of the properties and dimensions. We have already demonstrated that the MIM devices with sumanene-inserted bilayer graphene show1) huge resistive switching characteristics. However, the reason why the resistive switching occurs in graphene / sumanene / graphene structure has yet to be clarified. In this work, to investigate the mechanisms for resistive switching phenomenon in sumanene-inserted bilayer graphene, the plural kinds of stacked MIM structures are fabricated and evaluated. As a results, the measurement results clearly show that the graphene / sumanene / graphene structure is indispensable for resistive switching phenomenon. Furthermore, based on the temperature dependence of the resistive switching, it is confirmed that a significant ION/IOFF ratio can be obtained at higher operation temperatures.

Metal–semiconductor transition in bilayer graphene by bowl inversion of monofluorosumanene

“…43,44) Following these theoretical predictions, experimental studies have confirmed that sumanene-intercalated bilayer graphene can operate as a resistive switching device through control over the sumanene conformation with a gate electric field. 45,46) Recently, a unique sumanene derivative, monofluorosumanene, has been synthesized by the substitution of one hydrogen atom terminating the benzylic edges of sumanene by an F atom. 47) Thus, monofluorosumanene has structural asymmetry with respect to the fluorination site in the curved C-C network.…”