Novel one-component molecular glass photoresist based on cyclotriphosphazene containing t-butyloxy carbonyl group for i-line lithography

A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography

“…Amorphous materials are beneficial as resist materials to achieve high-performance behavior since low molecular weight organic compounds are more likely to crystallize than polymers. 43,44 Thus, a major challenge in developing molecular glass resists is that the organic compounds can form a stable amorphous phase above room temperature. The X-ray diffraction (XRD) profile of AD-10Boc powder shows a broad peak that is centered at 2 θ = 18° (Fig.…”

A novel water developable tetraphenyltin-based nonchemically-amplified molecular resist for sub-13 nm lithography

“…Compared with polymer materials, compounds with a small molecular weight are more likely to crystallize, resulting in the inability to prepare resist films by spin coating. 29,30 To confirm the film forming properties of SnMSF 4 , atomic force microscopy (AFM) is used to analyse the surface of the SnMSF 4 resist film (thickness: ∼30 nm) prepared by spin coating. As shown in Fig.…”

Photodegradable Polyurethane Resist with High Photosensitivity Based on Hexaarylbiimidazole Molecule Photoswitch

“…At present, Novolac-diazonaphthoquinone (DNQ) systems are the main photoresist of the most used i-line positive photoresist . Under UV irradiation, the DNQ undergoes Wolff rearrangement to generate ketene, which is further transformed into indene carboxylic acid, promoting the dissolution of Novolac in the developer. , Other major photoresists include chemical amplified resists (CAR), molecular glass photoresists, photodegradable polymers, and so on, which have been used in G-line, I-line, KrF, ArF, and EUV lithography. − Since the concept of “chemical amplification” was proposed by Hiroshi Ito and colleagues, it has become the paradigm of advanced 248 and 193 nm resist systems . To ensure the excellent resolution and process stability of photoresist when applied to mass production, excellent film-forming, etching resistance, thermal stability, suitable viscosity, low shrinkage, low thermal expansion coefficient, and swelling properties must be taken into consideration.…”