Novel Method for Site-Controlled Surface Nanodot Fabrication by Ion Beam Synthesis

Buckmaster, Ryan; Hanada, Takashi; Kawazoe, Yoshiyuki; Cho, Meoung Whan; Yao, Takafumi; Urushihara, Nobuaki; Yamamoto, Akira

doi:10.1021/nl048044j

Cited by 26 publications

(22 citation statements)

References 30 publications

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“…4A, single nanowires emerge and grow at the center of the irradiated areas due to FIB overlapping. [28] In this set of experiments, the ion beam was raster-scanned over the cross-shaped area from left to right and from top to bottom, leading to increased ion concentration at the center of the cross-shaped region. This method enables selection of the site of growth of individual nanowires.…”

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confidence: 99%

Indium Nanowires Synthesized at an Ultrafast Rate

Kim

Moon

et al. 2008

Advanced Materials

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Indium nanowires are grown on InGaN substrates at an ultrafast rate by using direct irradiation by a focused ion beam (see figure). The diameter and length of the synthesized nanowires, as well as their growth rate, can be effectively controlled by selecting the energy of the ion beam. Nanowires are synthesized on selected areas of the substrate by controlling the regions exposed to the ion beam using maskless patterning.

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mentioning

confidence: 99%

Indium Nanowires Synthesized at an Ultrafast Rate

Kim

Moon

et al. 2008

Advanced Materials

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“…After removal from the FIB system, the samples were ultrasonically cleaned in acetone and IPA before being loading into an ultrahigh vacuum (UHV) chamber with a base pressure of 1 x 10 -9 Torr and annealed at 600 °C for 1 h. This annealing time and temperature was chosen based on previous reports found in the literature of Ga droplet formation in SiO 2 [12]. After removal from the vacuum chamber, the samples were analyzed using an atomic force microscope (AFM) (Digital Instruments DimensionTM 3100) in tapping mode to obtain the topography information of the templates both before and after annealing.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Ga-templates Using a Focused Ion Beam

et al. 2009

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There are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.

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“…[19] Another approach to confined gallium nanoparticles is the implantation of Ga ions in silica with the aid of an ion beam. [20,21] These physical methods are based on high-vacuum equipment, resulting in high costs and small quantities. Large quantities of Ga nanoparticles can be obtained by soaking porous matrices in liquid gallium.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Supported Ga Nanodrops by a Bottom‐up Route

Armbrüster

Cardoso‐Gil

2015

Zeitschrift anorg allge chemie

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Nanoparticulate gallium can be obtained in an unconfined state by reduction of gallium-acetylacetonate with LiAlH4. The products were analyzed by scanning electron microscopy, elemental analysis together with X-ray diffraction, and thermal analysis. EXAFS investigations reveal, in accordance with the results from thermal analyses, that the particles are liquid at room temperature. The reason for the lower melting point could not be clarified within this study and might be caused either by the lower melting point of -gallium or by the small particle size of 10-20 nm. Upon cooling, several of the low-temperature modifications of gallium are observed depending on cooling-rate and temperature

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Novel Method for Site-Controlled Surface Nanodot Fabrication by Ion Beam Synthesis

Cited by 26 publications

References 30 publications

Indium Nanowires Synthesized at an Ultrafast Rate

Indium Nanowires Synthesized at an Ultrafast Rate

Fabrication of Ga-templates Using a Focused Ion Beam

Synthesis of Supported Ga Nanodrops by a Bottom‐up Route

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