Fabrication of Ga-templates Using a Focused Ion Beam

Abstract

There are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.

Fabrication of discrete gallium nanoislands on the surface of a Si(001) substrate using a focused ion beam

“…This value depends on the ion beam current used and milling time. The patterned samples were ultrasonically cleaned in acetone and IPA before being loaded into a vacuum chamber with a base pressure of 9 × 10 −10 Torr and annealed at 600 • C for 1 h. This annealing time and temperature was chosen based on previous reports found in the literature of Ga droplet formation on SiO 2 and our previous experiments on thin amorphous Si membranes [5].…”