Novel Materials and Devices for Sunlight Concentrating Systems

Hovel, H. J.

doi:10.1147/rd.222.0112

Cited by 33 publications

(3 citation statements)

References 10 publications

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“…Finally, it should be noted that read-out of the memory state in a resistive cross-bar memory is known to be limited by so-called sneak current paths, 44 which cause a false reading of the reading of the conductivity state of a junction because of leakage currents in the surrounding crossbar network. To reduce sneak currents, it is known that a selecting device, such as a diode, has to be placed in series with the conductive switching device.…”

Section: Resistive Switching Memoriesmentioning

confidence: 99%

Polymer and Organic Nonvolatile Memory Devices

et al. 2010

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Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories. We classify several possible devices according to their operation principle and critically review the role of the π-conjugated materials in the device operation. We propose specifications for applications for organic nonvolatile memory and review the state of the art with respect to these target specifications. Conclusions are drawn regarding further work on materials and device architectures.

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Section: Resistive Switching Memoriesmentioning

confidence: 99%

Polymer and Organic Nonvolatile Memory Devices

et al. 2010

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“…°C -1 pour K = 1 à 0,037 % . °C -1 pour K = 1 000, résultat analogue à celui trouvé par Hovel [17]. Or, nous avons montré dans le paragraphe 4.1 (voir Fig.…”

Section: Théorieunclassified

Cellules solaires au GaAlAs/GaAs à faible et fort niveaux de courant. Optimisation détaillée du rendement de conversion

Bourée

Therez

1980

Rev. Phys. Appl. (Paris)

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2014 L'étude proposée concerne l'optimisation du rendement des cellules au GaAlAs en fonction du niveau du courant, de la résistance série, de la température et en précise les limites dues aux différents paramètres physiques et technologiques. Une méthode détaillée de simulation numérique complète les résultats d'une étude classique des caractéristiques du fonctionnement des cellules solaires au GaAlAs/GaAs. L'analyse des principales propriétés photovoltaïques permet l'étude comparative des diverses structures. La théorie approfondie fait apparaître une modification des lois de conduction. Les valeurs des paramètres physiques qui rendent optimum le rendement de conversion à faible et fort niveaux de courant sont revues à partir de ces résultats. Les effets dus à l'élévation de la température, à la conduction non uniforme et aux distorsions des bandes d'énergie pour les dopages élevés sont développés.Abstract. 2014 The efficiency of GaAlAs solar cells is optimized with respect to the concentration ratio, series resistance and temperature. The proposed study describes the limitations yielded by the various physical and technological parameters. A detailed numerical analysis extends the results of a classical one for the GaAlAs/GaAs solar cell characteristics. The analysis of the main photovoltaïc properties leads to compare some structures with the others. The advanced theory shows a conduction law modification. Then, the physical parameter values which yield the maximum conversion efficiency at low and high current levels are reviewed. The effects of a temperature increase, a non-uniform conduction and the distortions of the energy bands at high doping densities are reported.Revue Phys. Appl. 15 (1980) 245-255 FÉVRIER 1980, PAGE

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“…The most important form of III-V solar cell is the AlxGal-zAs-GaAs heterojunction (89,90), which is capable of efficiencies >20% (91,92) for air mass one (AM1). The main terrestrial application of this type of solar cell will be in systems utilizing solar concentration (91).…”

Section: Cmentioning

confidence: 99%

Compound Semiconductors

Holonyak

Stillman

Wolfe

1978

J. Electrochem. Soc.

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The invention of the transistor (1, 2) in late 1947 and its later embodiment in junction form (3) marked the beginning of a profound change in electronics. Not only did the receiving tube basically become obsolete, but many new device functions emerged, and ultimately unbelievable size reductions and enormous packing densities resulted. As is well known, it became possible to build an entire functional system in a single conducting block of material. Also, new forms of power devices, based on the transistor effect, became possible.With the invention of the transistor the study of electrical conduction in solids took on new importance, and similarly the growth and study of semiconductor crystals, at first, Ge (4). Since Ge is a much more tractable material than other elemental semiconductors, it was natural that the transistor began with Ge, and that in turn the transistor (and p-n junctions) motivated the growth and study of single crystal Ge of great purity (4, 5). In fact, Ge and its successor Si, because of the transistor, have been purified to such high. levels and have been grown with such perfection that Si now even serves as the standard for determination of Avogadro's number (6).The original transistor pioneers were quite aware that beyond their initial experimental material (Ge), Si offered a large potential (7). The real emergence of Si as a transistor material probably came in late 1954 and early 1955 when, at Bell Laboratories, Sidiffused-impurity devices were first constructed. Based on his considerable understanding of switching devices and the need for low off-stage leakage current, John Moll above all others urged the development of diffused-impurity Si devices; for this purpose, in his own group Au-Sb and A1 metallization of Si were developed (8), as well as certain forms of transistor devices (9). The most important form of diffused-impurity p-n junctions came from Carl Frosch (and L. Derick) (1O), including oxide masking and with it the teaching to leave the oxide on Si for protection of the device (11). These developments were sufficient for Moll and his colleagues to be able to convince Jack Morton (spring of 1955) to switch transistor development from Ge to Si. The rest is history, and now where Si "can do the job," there is little interest on the part of device researchers to attempt to displace it with another material. No other material has been as extensively developed, nor offers a natural oxide affording so many processing and device advantages.As useful as Ge and, more so, Si have proven to be in semiconductor devices, they possess also certain limitations. Their bandgaps are indirect and are fixed 4 487C 488C

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Novel Materials and Devices for Sunlight Concentrating Systems

Cited by 33 publications

References 10 publications

Polymer and Organic Nonvolatile Memory Devices

Polymer and Organic Nonvolatile Memory Devices

Cellules solaires au GaAlAs/GaAs à faible et fort niveaux de courant. Optimisation détaillée du rendement de conversion

Compound Semiconductors

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