Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration

Asami, N.; Owada, T.; Akiyama, Shin–ichi; O'Hara, Neal; Iba, Yoshihisa; Kouno, T.; Kawamura, Hiroshi; Takesako, S.; Osada, Takenori; Kirimura, Tomoyuki; Watatani, H.; Uedono, Akira; Nara, Yasuo; Kase, M.

doi:10.1109/iitc.2009.5090373

Cited by 3 publications

(4 citation statements)

References 2 publications

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“…[34][35][36][37][38] The binding energy at 577.28 eV indicates the presence of Cr(OH) 3 (or CrOOH). [37][38][39][40][41] Figure 2c showst he high-resolution scan of O1s, where the peaks at 530.40a nd 531.44 eV are assigned to Cr 2 O 3 and Cr(OH) 3 (or CrOOH), [40] respectively.H owever,t he peak at 532.35 eV is somewhat com-plicated. It may come from the OÀHo fc hemisorbed dissociated water on the Cr 2 O 3 surface, [38,39] or it may also arise from the combination of Ca nd O.…”

Section: Compositions and Morphologymentioning

confidence: 99%

“…[37][38][39][40][41] Figure 2c showst he high-resolution scan of O1s, where the peaks at 530.40a nd 531.44 eV are assigned to Cr 2 O 3 and Cr(OH) 3 (or CrOOH), [40] respectively.H owever,t he peak at 532.35 eV is somewhat com-plicated. It may come from the OÀHo fc hemisorbed dissociated water on the Cr 2 O 3 surface, [38,39] or it may also arise from the combination of Ca nd O. [38] To sum up, this product is mainly composed of Cr 2 O 3 ,a ccompanied by Cr(OH) 3 .C r(OH) 3 may arise from the followingr eaction [Eq.…”

Section: Compositions and Morphologymentioning

confidence: 99%

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Annealing‐Free Cr₂O₃ Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Dong

Jia

et al. 2018

ChemSusChem

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The electron-selective layer (ESL) plays a pivotal role in the performance of perovskite solar cells (PSCs). In this study, amorphous dispersible chromium oxide (Cr O ) nanosheets are synthesized by a facile solvothermal reaction, and a Cr O ESL is prepared by spin-coating Cr O ink on fluorine-doped tin oxide substrates without need for further annealing. By using Cr O as the electron-selective layer and Cs (MA FA ) Pb(I Br ) as the light-absorption layer, a planar hybrid perovskite solar cell is fabricated. The spin-coating speed is optimized, the structure and morphology of samples are observed, the photoelectrical properties of ESLs are characterized, and the photovoltaic behaviors of devices are measured. Results show that the as-prepared Cr O layer has high optical transmittance and superb electron extraction and carrier transport property. The planar hybrid PSC based on the optimized Cr O ESL achieves a power conversion efficiency of 16.23 %, which is comparable to devices based on a conventional high-temperature-calcined TiO ESL. These results demonstrate a low-cost and facile route to highly effective perovskite solar cells.

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Section: Compositions and Morphologymentioning

confidence: 99%

Section: Compositions and Morphologymentioning

confidence: 99%

Annealing‐Free Cr₂O₃ Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Dong

Jia

et al. 2018

ChemSusChem

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“…The vinyl groups promote formation of a labile second phase which can be removed by annealing. Asami et al [ 55 ] prepared a film with K = 2.4 using an unspecified organosilane compound containing an acetylene bond. The low dielectric constant was achieved after e-beam curing.…”

Section: Dielectric Deposition Processesmentioning

confidence: 99%

Porous Dielectrics in Microelectronic Wiring Applications

McGahay

2010

Materials

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Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies.

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“…However, it has been reported that this has some risks such as the degradation of dielectric breakdown characteristics and time-dependent dielectric breakdown (TDDB) reliability. [10][11][12][13] In this paper, we demonstrate the effects of Cu interconnect integration using direct CMP process on porous low-k film. Reliability was improved by using a porous lowk film with higher resistance against CMP damage in addition to setting soft CMP conditions to reduce the damage.…”

Section: Introductionmentioning

confidence: 99%

Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film

Izumitani¹,

Kodama²,

Kido³

et al. 2010

Jpn. J. Appl. Phys.

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A hydrogel-based functional hybrid with highly uniformly dispersed nanoparticulate CdS semiconductors is proposed. The hybrid is synthesized using an in situ polymerization following an in situ chemical reduction, where the resulting particle size and the distribution of CdS nanocrystals (NCs) can be narrowly manipulated. The hybrids, containing a relatively small amount of the CdS NCs, exhibit a pronounced photoluminescence spectrum shift when in contact with a number of dielectric liquids and such a pronounced dielectric-confinement effect has been experimentally verified and modeled in this study. The sensing capability of the hybrids with respect to dielectric liquids or molecules can be optically characterized and varied depending upon the intensity of the dielectric environment surrounding the hybrids. This work suggests that the transparent, nanoporous CdS-pHEMA hybrids can be used as highly efficient optical sensing materials.

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Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration

Cited by 3 publications

References 2 publications

Annealing‐Free Cr₂O₃ Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Annealing‐Free Cr₂O₃ Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Porous Dielectrics in Microelectronic Wiring Applications

Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film

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Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration

Cited by 3 publications

References 2 publications

Annealing‐Free Cr2O3 Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Annealing‐Free Cr2O3 Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Porous Dielectrics in Microelectronic Wiring Applications

Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film

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Product

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Annealing‐Free Cr₂O₃ Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells

Annealing‐Free Cr₂O₃ Electron‐Selective Layer for Efficient Hybrid Perovskite Solar Cells