Novel low-field magnetoresistive devices based on manganites

Abstract

We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La 0.7 Sr 0.3 MnO 3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga + beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. r

Double-layer fabrication of cubic-manganites/hexagonal-ZnO on various substrates by ion beam sputtering, and variable electrical property

“…3) These interests pushed various researchers to study LBMO and LSMO thin films all over the world. [4][5][6][7] They are expected for various applications such as low-field magnetoresistive device, 8) organic light emitting diode, 9) and resistance switching devices. 10) On the other hand, ZnO is usually a n-type semiconductor with wide band gap of 3.4 eV, then it is transparent for visible light but absorbs ultra-violet light.…”

Material damage induced by nanofabrication processes in manganite thin films

“…Both ion implantation and radiation damage are especially important in the case of manganite thin films because of the fragile nature of double exchange magnetic interactions and the strong interplay between transport and magnetic properties. In fact, some studies have already explored the possibility of using the FIB technique to improve the magnetoresistive response in manganite thin films by taking advantage of radiation damage and ion implantation [15][16][17].…”