Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi‐layered structures

A variety of new results on HVPE growth of group III nitride layers and heterostructures are described. Crack free from 10 to 30 μm thick AlN layers were grown on 100‐mm SiC substrates. Bowing of the AlN/SiC wafers was controlled below 10 microns. Low growth rate HVPE with deposition rate below 10 nm/min was demonstrated for GaN, AlN, and AlGaN. This process resulted in the first HVPE grown multi‐quantum wells (MQWs) and superlattices. P‐type as‐grown GaN layers with acceptor concentrations up to 3×1019 cm–3 were demonstrated. InGaN layers from 0.002 to 2 μm thick were grown by HVPE for the whole composition range using c‐plane GaN/sapphire template substrates. Non‐polar InGaN layers were grown on a‐GaN/r‐sapphire templates and m‐plane GaN bulk substrates. Blue and green all‐HVPE LEDs were made utilizing InGaN MQWs grown on p‐GaN/sapphire templates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Photoluminescence properties of a single quantum well AlGaN/GaN/AlGaN structure grown by HVPE have been reported in the Ref. [7].…”

mentioning

confidence: 98%

New results on HVPE growth of AlN, GaN, InN and their alloys

Usikov¹,

Soukhoveev²,

Shapovalova³

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…Recently, substantial progress has been achieved to develop HVPE technology for highly doped p-type GaN and AlGaN materials [5], fabricate AlGaN/GaN quantum well structures by low growth rate HVPE [6], and grow high quality InN epitaxial layers [7]. All-HVPE In-free ultra violet (UV) and violet light emitting diodes have been fabricated [8,9] and are in production.…”

mentioning

confidence: 99%

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

Syrkin¹,

Ivantsov²,

Kovalenkov³

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

In this paper we report on first InGaN‐based light emitting structures grown by hydride vapour phase epitaxy (HVPE). InGaN layers and multi layer InGaN/InGaN epitaxial structures were grown on GaN/sapphire template substrates and characterized. InN content in the InGaN layers was varied from 5 to 35 mol.%. Thickness of InGaN layers was controlled from 10 nm to 2 microns. Density of treading dislocations in the InGaN layers was estimated to be in the 109 cm–2 range. X‐ray diffraction measurements and transmission electron microscopy data confirmed a formation of InGaN/InGaN superlattice structures. Light emitting diode epitaxial wafers were fabricated by HVPE deposition of n‐type InGaN layers and multi layer structures on p‐type GaN template substrates. Depending on InN content in the InGaN light emitting regions, peak electroluminescence wavelength varied from 450 to 510 nm. Results of material characterization are reported. Advantages of the proposed upside down LED configuration and future applications of HVPE to grow InGaN layers and structures are discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Catalyst free growth of highly crystalline ZnO nanopillars on c-GaN/sapphire templates by chemical vapor deposition technique

Saroj

Barick

Dhar

2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The catalyst free growth of a large density of highly oriented ZnO nanopillars on c-GaN/sapphire templates has been demonstrated through a chemical vapor deposition route. The pillars are found to have a narrow distribution of height and diameter. It has been observed that the morphology of the growth can be varied from entirely continuous epitaxial layer to oriented nanopillars by controlling the growth temperature and growth duration. These parameters can also be adjusted to control the average diameter and height of these pillars. The authors attribute the formation of nanopillars to a two dimension to three dimension transition of the growth mode as a result of an abrupt change of Zn to oxygen flux ratio upon the closure of oxygen flow into the reactor at the end of the growth.

show abstract

Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi‐layered structures

Cited by 4 publications

References 11 publications

New results on HVPE growth of AlN, GaN, InN and their alloys

New results on HVPE growth of AlN, GaN, InN and their alloys

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

Catalyst free growth of highly crystalline ZnO nanopillars on c-GaN/sapphire templates by chemical vapor deposition technique

Contact Info

Product

Resources

About