Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials 1988
DOI: 10.7567/ssdm.1988.a-3-4
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Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650℃

Takao Kobayashi1,
Shinya Iijima2,
Aoki Shin3
et al.
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Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements

Kondô
1
,
Kobayashi
2
,
Tamaki
3
1995
IEEE Trans. Electron Devices
14
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0
0
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Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements

Kondô
1
,
Kobayashi
2
,
Tamaki
3
1995
IEEE Trans. Electron Devices
14
0
0
0
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Analysis of emitter efficiency enhancement induced by residual stress for in situ phosphorus-doped polysilicon emitter transistors

Kondô
1
,
Shiba
2
,
Tamaki
3
1997
IEEE Trans. Electron Devices
4
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