Abstract:The selective lateral growth of GaN with extremely low dislocation density has been achieved for the first time directly on a masked sapphire substrate without a GaN epitaxial underlayer via metalorganic vapor phase epitaxy. Both the mask material for selective growth and the growth conditions have been optimized for this complete selective growth. Dislocation densities less than 5 × 10 6 cm -2 have been obtained when SiN was used as a mask and GaN was used as a low-temperature buffer layer. This reduction in … Show more
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