2022
DOI: 10.1002/smll.202200133
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Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Abstract: Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite‐based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field‐effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detecti… Show more

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Cited by 7 publications
(6 citation statements)
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“…Furthermore, AFE materials are gaining attention for emerging applications in ultrafast neuromorphic computing [62], tunnel junctions [63], hybrid charge trap memories [64], ferroelectric random-access memories [65], and solid-state ferroic refrigerators [66]. The distinctive AFE properties in HfO 2 -based materials are attributed to field-induced transitions between the polar orthorhombic phase (Pca2 1 ) [67] and the nonpolar tetragonal phase (P4 2 /nmc), differing from the antiparallel dipole configuration found in materials like PbZrO 3 and NaNbO 3 [68].…”
Section: Applications Of Afesmentioning
confidence: 99%
“…Furthermore, AFE materials are gaining attention for emerging applications in ultrafast neuromorphic computing [62], tunnel junctions [63], hybrid charge trap memories [64], ferroelectric random-access memories [65], and solid-state ferroic refrigerators [66]. The distinctive AFE properties in HfO 2 -based materials are attributed to field-induced transitions between the polar orthorhombic phase (Pca2 1 ) [67] and the nonpolar tetragonal phase (P4 2 /nmc), differing from the antiparallel dipole configuration found in materials like PbZrO 3 and NaNbO 3 [68].…”
Section: Applications Of Afesmentioning
confidence: 99%
“…[9,14,15] HfO 2 -based FE materials are suitable for memory devices (transistors, capacitors, and tunnel junctions), logic devices (neuromorphic computing and negative capacitance (NC) field-effect transistors (FET)), sensors and energy conversion devices (infrared sensors, solid-state coolers, and pyroelectric energy harvesters), and microwave applications (phase shifters, filters, and phased antenna arrays). [16][17][18][19][20][21][22][23][24][25][26][27][28] In contrast, HfO 2 AFE materials…”
Section: Introductionmentioning
confidence: 99%
“…HfO 2 ‐based FE materials are suitable for memory devices (transistors, capacitors, and tunnel junctions), logic devices (neuromorphic computing and negative capacitance (NC) field‐effect transistors (FET)), sensors and energy conversion devices (infrared sensors, solid‐state coolers, and pyroelectric energy harvesters), and microwave applications (phase shifters, filters, and phased antenna arrays). [ 16–28 ] In contrast, HfO 2 AFE materials can be employed in energy‐related applications. [ 19,20 ] The most important application of HfO 2 ‐based AFE material is energy storage capacitors for pulse power technology.…”
Section: Introductionmentioning
confidence: 99%
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“…However, traditional compression refrigeration technology utilizes hydrofluorocarbon (HFC) gases, which have a global warming potential (GWP) greater than 1000. This GWP is 3 orders of magnitude higher than that of carbon dioxide (CO 2 ), leading to significant environmental damage. To address these environmental concerns, several new solid-state refrigeration technologies have emerged as environmentally friendly alternatives, including thermoelectric effect (TE), magnetocaloric effect (MCE), electrocaloric effect (ECE), elastocaloric effect (eCE), and barocaloric effect (BCE) . These innovative approaches offer promising solutions for sustainable and energy-efficient refrigeration.…”
Section: Introductionmentioning
confidence: 99%