Novel extreme ultraviolet (EUV)-resist material based on noria (water wheel-like cyclic oligomer)

Study on resist performance of chemically amplified molecular resists based on cyclic oligomers

“…Recently, Kudo and co-workers succeeded in the synthesis of a new ladder cyclic oligomer "noria" (water wheel in Latin) 6 and reported the synthesis and photochemical reactivity of noria derivatives containing t-butoxycarbonyl groups, 7,8 t-butylester groups, 9 acetal groups, 10,11 and adamantyl ester groups. [12][13][14][15] It was found that these noria derivatives had high photo-reactivity and produced clear line and space patterns with resolutions of 50-70 nm using an EB exposure tool and 26 nm using EUV exposure tool, respectively. [8][9][10][11][12][13][14][15] To enhance the performance of molecular resist materials based on cyclic oligomers, we evaluated their lithographic performances such as sensitivity, resolution and LWR, using EUV and EB exposure systems.…”

“…[12][13][14][15] It was found that these noria derivatives had high photo-reactivity and produced clear line and space patterns with resolutions of 50-70 nm using an EB exposure tool and 26 nm using EUV exposure tool, respectively. [8][9][10][11][12][13][14][15] To enhance the performance of molecular resist materials based on cyclic oligomers, we evaluated their lithographic performances such as sensitivity, resolution and LWR, using EUV and EB exposure systems. Furthermore, we also examined the etching durability of the synthesized molecular resist materials.…”

Synthesis and Resist Properties of Hyperbranched Polyacetals

“…In our previous report, EB and EUV resist patterning property of noria derivative with pendant adamantyl ester groups (noria-AD) were examined. The synthesized noria-AD offered 40 nm resolution resist pattern with LWR = 9.5 nm [14] in the case of EB exposure tool and a clear 26 nm resolution pattern with LWR = 8.3 nm by means of EUV exposure tool [7]. These results indicate that the present poly(THPE-co-BVOC) would have higher potential to offer higher resolution pattern using EUV lithography system.…”

Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation

“…Recently, Kudo and coworkers have succeeded in the synthesis of a new ladder cyclic oligomer "noria" (water wheel in Latin) [13] and reported the synthesis and photochemical reactivity of noria derivatives containing t-butoxycarbonyl groups [14,15], t-butylester groups [16], acetal groups [17,18], and adamantyl ester groups [19][20][21][22][23]. It was found that these noria derivatives have high photoreactivity and produce clear line and space patterns with resolutions of 50-70 nm using an EB exposure tool and 26 nm using an EUV exposure tool [15][16][17][18][19][20][21][22][23]. Moreover, we clarified that the sensitivity of the resist materials was consistent with the structure of the cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar [5]arene [24].…”