Study on resist performance of chemically amplified molecular resists based on cyclic oligomers

Abstract

Novel resist materials are required for lithographic processing with ionization radiation such as extreme ultraviolet (EUV) and electron beam (EB) exposure tools. In this study, we synthesized positive-tone chemically amplified molecular resist materials with pendant adamantyl ester (AD) and cyclohexyl 2-propyl ether moieties based on cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar [5]arene, and we examined the lithographic performances of sensitivity, etching durability, and patterning under EUV and EB exposure. We clarified that the sensitivity of the resist materials was consistent with the structure of the cyclic oligomers, i.e., the hole size of the molecular structure might be an important factor relevant to high-resolution resist materials. We found that chemically amplified molecular resists based on cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar [5]arene are promising candidates for higher-resolution resist materials.Corresponding Author

Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation

“…It was found that these noria derivatives have high photoreactivity and produce clear line and space patterns with resolutions of 50-70 nm using an EB exposure tool and 26 nm using an EUV exposure tool [15][16][17][18][19][20][21][22][23]. Moreover, we clarified that the sensitivity of the resist materials was consistent with the structure of the cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar [5]arene [24].…”

Pillar-Shaped Macrocyclic Hosts Pillar[n]arenes: New Key Players for Supramolecular Chemistry

“…Kudo et al investigated novel resist materials using pillar [5]arene platform. 286 A pillar [5]arene derivative with adamantyl moieties connected by ester bonds showed high lithographic performance, and is thus a promising candidate for high-resolution resist materials as well as noria, calix [n]arene dimers, and CDs.…”

Synthesis and Resist Properties of Hyperbranched Polyacetals

“…In our previous report, EB and EUV resist patterning property of noria derivative with pendant adamantyl ester groups (noria-AD) were examined. The synthesized noria-AD offered 40 nm resolution resist pattern with LWR = 9.5 nm [14] in the case of EB exposure tool and a clear 26 nm resolution pattern with LWR = 8.3 nm by means of EUV exposure tool [7]. These results indicate that the present poly(THPE-co-BVOC) would have higher potential to offer higher resolution pattern using EUV lithography system.…”