Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability

Rahimo, Munaf; Kopta, A.; Linder, Stefan

doi:10.1109/ispsd.2006.1666064

Cited by 52 publications

(39 citation statements)

References 2 publications

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“…To achieve this, one should consider the following design rules: 1) Carrier enhancement at the emitter for low on-state losses. The IGBT can be designed to have a dense plasma near the emitter by adopting Trench cell designs [18], implementing n-enhancement layers [19] or by reducing the mesa width between trenches [20]. Modern IGBTs, which are designed in accordance with one of these approaches, have to provide a sufficient hole injection from the collector side.…”

Section: Discussionmentioning

confidence: 99%

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Reigosa

Iannuzzo

Rahimo

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Abstract-In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has been shaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigating high-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

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Section: Discussionmentioning

confidence: 99%

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Reigosa

Iannuzzo

Rahimo

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…This is the case of the CSTBT (Carrier Stored Trench gate Bipolar Transistor) from Mitsubishi [37], where the built-in potential across the n-buried/nbase junction prevents the hole flow. A similar concept has been adopted by ABB [38] to prevent the hole current flow into the p-body region. The cross-section of this IGBT structure is shown in Fig.…”

Section: Igbtsmentioning

confidence: 99%

“…These solutions, that include a hole barrier for the hole flow, do not need neither to reduce the number of contacted IGBT cells nor to increase the distance between adjacent p-bodies, although they can also been considered. [38] In addition to the above mentioned measures for optimizing the plasma distribution in the n-base layer, modern IGBTs are characterized by a vertical shrink of the n-layer giving rise to a thin base region. This concept is applied to IGBTs in the 600V-6.5kV range, and has been possible by new processes on ultrathin silicon wafers for low voltage IGBTs [39,40].…”

Section: Igbtsmentioning

confidence: 99%

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

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Original scientific paperRevolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices' technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.Key words: MOS-gated power devices, power MOSFETs, CoolMOS, super-junction devices, IGBTs, PiN rectifiers Prikaz stanja silicijevih MOS upravljanih učinskih sklopova i PiN ispravljača. U posljednjim desetljećima svjedočimo razvoju sustava učinske elektronike u pogledu povećanja efikasnosti i pouzdanosti. Napredak je omogućen zahvaljujući izvanrednom napredku koji je postignut na području učinskih poluvodiča. Pojava MOS upravljanih učinskih sklopova s visokom ulaznom impedancijom, kao što su MOSFET i IGBT, rezultirao je probojem u projektiranju i proizvodnji sustava učinske elekronike. Ovajčlanak daje uvid u napredak koji je u posljednje vrijeme ostvaren u razvoju silicijeve MOS upravljane učinske elektronike i ispravljača. Uz dosadašnji razvoj tehnologije navedenih komponenata, učlanku je uključen i osvrt na revolucionarne koncepte budućeg razvoja. Konkretno, u radu su objašnjene tehnologija rova za MOSFET i korištenje koncepta super spoja za probijanje granice jednodimenzionalnog silicija. Razmatrana su i poboljšanja IGBT-ova koja se baziraju na uporabi tankih pločica a strategijama optimiranja distribucije plazme u PT IGBT-ovima za vrijeme aktivnog stanja. Konačno, prikazan je i napredak u tehnologiji PiN dioda koji uključuje nove strukturalne koncepte katode i anode. Ovi pristupi su omogućili smanjenje ukupnih gubitaka PiN diode i blagu dinamiku reverznog oporavka, što rezultira povećanjem robusnosti sklopa.

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“…This, in turn, leads to a lower carrier concentration at the collector, and therefore, smaller turn-off losses. On the other hand, the trench IGBT cell enhances the carrier concentration at the emitter side of the IGBT by introducing an n + layer surrounding the p-well layer [18]. As a result, the conduction losses in the trench IGBT are smaller in comparison with the planar IGBT.…”

Section: Introductionmentioning

confidence: 99%

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Reigosa

Iannuzzo

Rahimo

et al. 2018

IEEE Trans. Power Electron.

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Abstract-In this paper, the oscillation mechanism limiting the ruggedness of IGBTs is investigated through both circuit and device analysis. The work presented here is based on a timedomain approach for two different IGBT cell structures (i.e., trench-gate and planar), illustrating the 2-D effects during one oscillation cycle. It has been found that the gate capacitance varies according with the strength of the electric field near the emitter, which in turn leads to charge-storage effects associated with low carrier velocity. For the first time, it has been discovered that a parametric oscillation takes place during the short-circuit in IGBTs, whose time-varying element is the Miller capacitance, which is involved in the amplification mechanism. This hypothesis has been validated through simulations and its mitigation is possible by increasing the electric field at the emitter of the IGBT with the purpose of counteracting the Kirk Effect.

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Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability

Cited by 52 publications

References 2 publications

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

A Review of Si MOS-gated Power Switches and PiN Rectifiers

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

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