Novel dual-V<inf>th</inf> independent-gate FinFET circuits

Abstract

This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-V th independent-gate FinFETs. Dual-V th FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flexibility than conventional forms, e.g., implementing 12 unique Boolean functions using only four transistors. The gates are designed and calibrated using the University of Florida double-gate model into a technology library. Synthesis results for 14 benchmark circuits from the ISCAS and OpenSPARC suites indicate that on average, the enhanced library reduces delay, power, and area by 9%, 21%, and 27%, respectively, over a conventional library designed using FinFETs in 32nm technology.

Dual-$V_{th}$ Independent-Gate FinFETs for Low Power Logic Circuits

“…The table shows that the complete library will lose its competitive edge in terms of the total power consumption at some frequency between 500 MHz and 1 GHz. The methodology to collect results in this paper differs from the preliminary version [13]. In this paper, the simulations are performed at the elevated temperature of 75°C instead of the SPICE default of 27°C.…”

“…In this paper, the simulations are performed at the elevated temperature of 75°C instead of the SPICE default of 27°C. Further, in [13], dynamic power of a circuit is estimated at 85% of the frequency established by the basic library for that circuit. This frequency can be unrealistically high, specially in the case of smaller circuits.…”

“…On the other hand, the library that is built using only parallel mergers proposed in literature results in a 20% reduction in the total power and 21% reduction in the number of fins, over a conventional library based on shorted-gate FinFETs in 32 nm technology. This paper is an extended version of [13]. It provides an extended investigation of the physical background of these novel devices.…”

Multiple Independent Gate FETs: How many gates do we need?

“…For example, MIGFETs in [4] realize fast datapath circuits [9] as they switch based on the XNOR operation between gate signals. Analogously, MIGFETs in [6] enable compact control logic circuits as they switch based on the AND/OR between gate signals. Other MIGFETs with expressive switching functions, e.g., gamble [5] and threshold [8] functions, advantageously fit other classes of circuits.…”

Threshold Voltage Control through Multiple Supply for Low Power IG-FinFET Circuit

“…Mainly in this paper apply the controllability technique on the Independent gate (IG) mode FinFET, in this mode of FinFET the number of transistors mandatory for implementing specific logic functions are less as compared to the standard circuits with short gate FinFET. Area saving, condensed power consumption, considerable speed improvement is exhibited due to the reduced parasitic capacitance and the lesser transistor stack heights with the independent gate FinFET circuits as compared to the circuits with short gate [6], [7]. In this paper a new circuit synthesis style based on multiple supply and threshold voltages is presented, it is an innovative way to control of connected gate FinFET.…”