Novel dual-mode photoresist based on cationic polymerization and acidolysis

Moon, Seong-Yun; Naitoh, Kazuhiko; Yamaoka, Tsuguo

doi:10.1021/cm00033a022

Cited by 23 publications

(12 citation statements)

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“…[7][8][9] Figure 1 shows insolubilization curves of poly (p-hydroxystyrene) (PHS) films containing TPS-3VE-Tf. The PHS film with 1 mol% of TPS-3VE-Tf begins to become insolubilized at a SB temperature of 150 C and shows an insolubilization The film with 6 mol% of TPS-Tf 3VE also began to insolubilize at 50 °C and showed nearly complete insolubilization at 90 °C .…”

Section: Resultsmentioning

confidence: 99%

Novel Deep UV Photoresist Based on Thermal Cross-Linking and De-Cross-Linking of Cross-Linkable Photoacid Generator.

Moon

Koo

et al. 1998

J. Photopol. Sci. Technol.

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We have synthesized a series of thermally cross-linkable photoacid generators. Among them, we used bis(4-(2-(vinyloxy)ethoxy)benzene)-4-methoxybenzene sulfonium triflate and tris(4-(2-(vinyloxy)ethoxy)benzene) sulfonium triflate for two or three component photopolymers, containing a phenolic binder polymer and a cross-linkable photoacid generator. On irradiation with deep UV, the photopolymer films had sensitivities of ca. 10 ti 20 mJ/cm2. The films, especially composed of polyp-hydroxystyrene-co-styrene), 2, 2-bis(4-(2-(vinyloxy)ethoxy)phenyl)propane, and a cross-linkable photoacid generator, showed the high resolution of 0.24 I.L m L/S under KrF excimer laser stepper (NA 0.45).

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Section: Resultsmentioning

confidence: 99%

Novel Deep UV Photoresist Based on Thermal Cross-Linking and De-Cross-Linking of Cross-Linkable Photoacid Generator.

Moon

Koo

et al. 1998

J. Photopol. Sci. Technol.

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“…[1][2][3] Yamaoka and coworkers proposed the cross-linking type positive working resist using a thermal cross-linking and the acid catalyzed de-cross-linking reaction of the vinyl ether cross-linker. Many papers using vinyl ether cross-linker such as the two or three functional vinyl ether cross-linker, [4][5] negative working resist due to cationic polymerization in the presence of acid, [6][7] cross-linkable photoacid generator, 8 etc., were reported.…”

Section: Introductionmentioning

confidence: 99%

Performance of vinyl ether cross-linkers on resist for 193-nm lithography

et al. 2002

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A three-component positive working resist composed of an acrylate polymer, vinyl ether cross-linker, and photoacid generator was evaluated for vacuum UV lithography. The vinyl ether cross-linker using tricyclodecyl group of alicyclic compound has a high transparency. This resist system shows a relatively high sensitivity and has a good profiling by irradiation using 193 nm light from an ArF excimer laser. Moreover, we found that these cross-linking type resists have advantages with respect to its resist properties such as the acid diffusion and the dry etching resistance.

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“…The authors previously reported (20)(21)(22)) that a two-component photoresist composed of poly{p-hydroxystyrene-co-p- [2-(vinyloxy)ethoxy]styrene}, and a PAG, and a three-component photoresist composed of a polymer bearing carboxyl groups (or a phenolic polymer), a vinyl ether monomer, and a PAG, exhibit positive working behavior with high resolution. In our very recent work (23), triphenylsulfonium salt PAGs containing vinyl ether groups were synthesized and used as thermally crosslinkable PAGs in a two-component system.…”

Section: Introductionmentioning

confidence: 99%

Three-Component Photoresists Containing Vinyl Ether Crosslinking Agents

Moon¹,

Chung²

2001

Journal of Macromolecular Science, Part A

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Thermal crosslinking reactivity and lithographic performance were investigated for three-component photoresists composed of a Brønsted acid-based binder polymer, a vinyl ether monomer as a crosslinking agent, and a photoacid generator. Poly(p-hydroxystyrene) (PHS) and poly(styrene-co-acrylic acid) (PST/PAA) were used as the binder polymers. The resists acted as highly sensitive, chemically amplified resists based on thermal crosslinking between a binder resin and a vinyl ether monomer and subsequent acidolytic cleavage of the crosslinks. The rate constants and activation energies for the thermal crosslinking reactions were determined, and the resists based on PST/PAA showed higher thermal crosslinking reactivity than PHS resists. The resists in this study exhibited high photosensitivity and afforded positive-tone images by alkaline development.

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Novel dual-mode photoresist based on cationic polymerization and acidolysis

Cited by 23 publications

References 0 publications

Novel Deep UV Photoresist Based on Thermal Cross-Linking and De-Cross-Linking of Cross-Linkable Photoacid Generator.

Novel Deep UV Photoresist Based on Thermal Cross-Linking and De-Cross-Linking of Cross-Linkable Photoacid Generator.

Performance of vinyl ether cross-linkers on resist for 193-nm lithography

Three-Component Photoresists Containing Vinyl Ether Crosslinking Agents

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