Novel devices based on the combination of nitride and II–VI materials

Abstract

We demonstrate the direct wafer bonding of GaN and ZnSe‐based materials. We report on the structural, optical, and electrical characteristics of InGaN/GaN light‐emitting diodes (LEDs) and ZnSe‐based II–VI materials combined by direct wafer bonding. Reflectivity, transmission electron microscopy (TEM), and current–voltage (I –V ) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Cross‐sectional TEM revealed a uniform wafer‐bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens‐shaped cavities at semiconductor interfaces. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II-VI based semiconductor disk lasers

“…However, these II–VI bi‐polar electrically‐driven devices suffer from short operating lifetimes due to difficulties with p‐type doping. While optically‐pumped II–VI semiconductor based lasers have not received the same attention as their III–V counterparts, more recently, there have been several reports on optically‐pumped vertical‐emitters and vertical cavity surface emitting lasers (VCSELs) based on II–VI semiconductor quantum wells (QWs), quantum dots (QDs), coupled QD–QW systems as active materials and novel micro‐cavity design . The materials systems investigated include ZnSe‐based quantum structures, ZnSSe and MgS/ZnCdSe superlattices, and combination of nitride and II–VI materials, such as, GaN–ZnSe.…”