2018
DOI: 10.1016/j.mejo.2017.12.012
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Novel designs for digital gates based on single electron devices to overcome the traditional limitation on speed and bit error rate

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Cited by 13 publications
(6 citation statements)
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“…In the literature, some SET logic gates have already been proposed [12,13,14,15,16,17,2,18,19,20,21]. In particular, different circuit architectures of SET-NANDs can be found in [2,18,19].…”
Section: Set Nand/nor Programmable Logic Gatementioning
confidence: 99%
“…In the literature, some SET logic gates have already been proposed [12,13,14,15,16,17,2,18,19,20,21]. In particular, different circuit architectures of SET-NANDs can be found in [2,18,19].…”
Section: Set Nand/nor Programmable Logic Gatementioning
confidence: 99%
“…e complementary metal oxide semiconductor (CMOS) technology has many defects, such as short channel effect and high power consumption; it cannot, therefore, continue to follow Morrie's law by increasing the number of devices per chip [1]. It creates the need for nanoscale devices, with high-performance rates and low power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…Complementary Metal Oxide Semiconductor (CMOS) technology faces major problems such as short channel effects [1], high current leakage, decreasing gate control and high lithography costs, etc., when scaled down near to nanometers [1]. Scientists and researchers seek to find alternatives to the traditional CMOS process [2]- [4], to overcome the above mentioned problems.…”
Section: Introductionmentioning
confidence: 99%
“…To find replacements for the CMOS technology, many devices and techniques are being introduced and evaluated by researchers, such as Spin-wave architecture, Single-electron devices, Quantum Computing etc. [2], [3]. Among the existing new techniques, CNTFET is one of the demonstrated alternatives to CMOS transistors, which operates satisfactorily [5], [6].…”
Section: Introductionmentioning
confidence: 99%