Novel Design Space of Load Modulated Continuous Class-B/J Power Amplifier

Du, Xuekun; You, Chang Jiang; Cai, Jingye; Helaoui, Mohamed; Ghannouchi, Fadhel M.; Zhao, Yulong; Li, Xiang

doi:10.1109/lmwc.2017.2779883

Cited by 26 publications

(32 citation statements)

References 6 publications

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“…A simple method to obtain the design space of LM inverse Class‐F PAs is that the drain‐source current i DS is multiplied by the driven level factor β, which is similar to the processing procedure of LM Class‐B/J PAs in Refs. and . The harmonic impedances of LM Class‐B/J PAs are mainly provided by the device output capacitance C out of RF power transistor.…”

Section: Theory Of Lm Inverse Class‐f Pas With Extended Conduction Anglementioning

confidence: 99%

“…The driven level factor β in Ref. is introduced to shape the peak value of i DS , and it has a relationship with OPBO: β = 10 ‐OPBO/20 . Then, i DS is expressed as Equation .…”

Section: Proposed Design Space Of Inverse Class‐f Pas With Extended Cmentioning

confidence: 99%

“…Most researchers have made great effect to develop various efficiency enhancement techniques for solving the PAs’ issue of transmitting high PAPR signal with poor efficiency, such as Doherty, envelope tracking, Chireix out‐phasing, pulse width modulation, and pulsed load modulation . As an alternative to above techniques, dynamic load modulation (DLM) technique was first introduced into Class‐E PAs by Rabb, and has been developed for the past few years . DLM technique can be realized by using two possible practical implementations, namely load modulated balanced type and varactor or microelectromechanical systems (MEMS) or laterally diffused metal oxide semiconductor (LDMOS) based DLM type .…”

Section: Introductionmentioning

confidence: 99%

“…5 As an alternative to above techniques, dynamic load modulation (DLM) technique was first introduced into Class-E PAs by Rabb,6 and has been developed for the past few years. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] DLM technique can be realized by using two possible practical implementations, namely load modulated balanced type 7,8 and varactor or microelectromechanical systems (MEMS) or laterally diffused metal oxide semiconductor (LDMOS) based DLM type. [9][10][11][12][13][14][15][16][17][18][19][20][21][22] The load modulated balanced type modulates the load impedance by using a pair of RF power transistor in a quadrature balanced configuration, and high power external control signal is used to modulate the desired load impedance.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of load modulated inverse Class-F power amplifier with extended conduction angle

You

Helaoui

et al. 2018

Int J RF Microw Comput Aided Eng

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A novel design space of load modulated (LM) inverse Class‐F power amplifiers (PAs) with extended conduction angle is proposed. The effects of the driven level factor β and the biasing operation factor ρ on the third‐harmonic generation are discussed. The harmonic generation mechanism shows that the knee voltage effects are the source of third‐harmonics for LM inverse Class‐F PAs. The definition of the inverse Class‐F mode is consistently valid under the circumstance of load modulation in a limited output power back‐off (OPBO) range. Meanwhile, the conduction angle θ0 can be extended from π/2 to a limited value (<110°) to keep the standard waveforms of inverse Class‐F mode and maintain high efficiency. After introducing the “continuous concept” and the second harmonic manipulation method, the mathematical design space of inverse Class‐F PAs with extended conduction angle is derived. Calculation shows that the purely conductive load modulation can enable high back‐off efficiency operation for LM inverse Class‐F PAs. As proof of concept, a demonstrator amplifier is fabricated and measured. The experimental results show that the power added efficiency (PAE) with optimum Vctrl is improved by 5% over an OPBO range of 6 dB compared with the same PA with fixed Vctrl.

show abstract

Section: Theory Of Lm Inverse Class‐f Pas With Extended Conduction Anglementioning

confidence: 99%

“…The driven level factor β in Ref. is introduced to shape the peak value of i DS , and it has a relationship with OPBO: β = 10 ‐OPBO/20 . Then, i DS is expressed as Equation .…”

Section: Proposed Design Space Of Inverse Class‐f Pas With Extended Cmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of load modulated inverse Class-F power amplifier with extended conduction angle

You

Helaoui

et al. 2018

Int J RF Microw Comput Aided Eng

Self Cite

View full text Add to dashboard Cite

show abstract

“…By further extending the drain voltage and current equation on the basis of continuous Class‐B/J mode, the design space of harmonic impedance is enlarged to include the real part, which enormously expands the bandwidth of continuous Class‐B/J PAs and maintain a high efficiency level simultaneously. Several continuous Class‐B/J PAs including extended continuous mode have been reported at different frequency bands . Nevertheless, to date, there have been few reports of multioctave bandwidth Class‐B/J.…”

Section: Introductionmentioning

confidence: 99%

Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

Xuan

Yang

Liu

2019

Int J RF Microw Comput Aided Eng

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The bandwidth covered by contemporary communication technologies has reached over an octave. But most existing power amplifier (PA) configurations cannot meet this requirement while at the same time maintaining a high efficiency. Therefore, a novel structure for bandwidth enhancement at a high efficiency level is proposed together with the systematic design methodology in this article. The difficulty lies in the overlap of the fundamental and harmonic frequencies. On this issue, the extended continuous Class‐B/J mode can extend the impedance of the second harmonic to a resistive‐reactive and relax design requirements for overlapping design space of fundamental and second harmonic frequencies. Specifically, the presented innovative circuit structure uses the multiple frequencies matching method to manipulate four fundamental and the corresponding second harmonics frequency points simultaneously, which can further effectively expand the bandwidth on the basis of the extended continuous Class‐B/J PA. To verify the validity of the proposed theory, a gallium nitride multioctave PA is designed, implemented, and measured. Measured results show a fractional bandwidth of 148.4% from 0.4 to 2.7 GHz, with drain efficiency of 63%‐78%, saturated output power greater than 39 dBm, and large signal gain larger than 9 dB. For the single carrier WCDMA signal with a channel bandwidth of 3.84 MHz and a peak to average power ratio of 6 dB, the adjacent channel power ratio of −47.5 to −35 dBc and −42.8 to −31.5 dBc at an average output power of 33 and 36 dBm separately are achieved over the whole frequency band.

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Design of a Doherty power amplifier based on extended continuous class‐GF mode for broadband applications

Xuan,

Cheng,

Hayes

et al. 2024

Circuit Theory & Apps

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In this article, a systematic theory and design approach are presented to achieve bandwidth expansion of the Doherty power amplifier (DPA) by using extended continuous Class‐GF (ECCGF) power amplifiers (PAs) as carrier PAs. The results of the theoretical analysis indicate that compared to conventional DPA, introducing ECCGF PA as carrier PA into the DPA design can establish two larger target impedance spaces with overlapping regions for saturation and output back‐off (OBO) power levels, which can reduce the design complexity of impedance inverter networks (IINs) while achieving DPA bandwidth expansion. Based on this, the proposed design theory is validated in the design and fabrication of a prototype DPA employing the CGH40010F GaN HEMT provided by MACOM. The measured results show that under continuous wave excitation, the designed DPA delivers a saturated output power of 43.1–44.2 dBm in the range of 1.3–2.7 GHz with a relative bandwidth of 70%. The drain efficiencies of 61.2%–73.2% and 42.5%–52.7% are achieved over the entire band at the saturation and 6‐dB OBO power levels, respectively. The measured results also confirmed the theoretical findings.

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Novel Design Space of Load Modulated Continuous Class-B/J Power Amplifier

Cited by 26 publications

References 6 publications

Investigation of load modulated inverse Class-F power amplifier with extended conduction angle

Investigation of load modulated inverse Class-F power amplifier with extended conduction angle

Design of multioctave high‐efficiency power amplifier based on extended continuous Class‐B/J modes

Design of a Doherty power amplifier based on extended continuous class‐GF mode for broadband applications

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