Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

Lin, Yu-Hsiang; Jiang, Jia-Jhen

doi:10.1109/led.2008.2000604

Cited by 11 publications

(4 citation statements)

References 14 publications

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“…The speedily widening market for wireless communication devices in the past has increased the need for GaAs-based epitaxial materials. [1][2][3] Field-effect transistors ͑FETs͒ are important in today's high frequency communication systems. 4 The development of high electron mobility transistors ͑HEMTs͒ in the late 1970s in the AlGaAs/GaAs materials system gave device designers the opportunity to exploit the high mobility of undoped GaAs to improve fieldeffect transistor performance.…”

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confidence: 99%

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Lin

2011

J. Electrochem. Soc.

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This investigation reports on the first symmetrically double-delta-doped channel InAlAs/InGaAs/GaAs metamorphic field-effect transistor ͑MFET͒. Two types of devices are fabricated as follows. In the fabrication of the first, the gate recessing steps are carried out using nonselective etching solution ͑phosphoric acid/hydrogen peroxide mixtures͒. In the fabrication of the second, a pH 5.5 selective succinic acid:ammonia hydrogen peroxide:water wet chemical etching liquid is adopted to form the gate recess. A succinic acid-based solution is found to be a better selective etchant of an InGaAs/InAlAs system than the more commonly used phosphoric acid-based solutions, in terms of the etching selectivity and the smoothness of the etched surface. The etch-stop mechanism is inferred from Auger electron spectroscopy to involve the formation of nonvolatile aluminum oxide, in strong agreement with the X-ray photoelectron spectroscopy spectra. Nearly kink-free current-voltage characteristics are achieved. The assessment of these structures for application in power field-effect transistor devices reveals that high frequency, high transconductance devices are feasible. As far as the authors are aware, this study is the first to compare MFETs that use a nonselective wet gate recess with those that use a selective wet gate recess.The speedily widening market for wireless communication devices in the past has increased the need for GaAs-based epitaxial materials. 1-3 Field-effect transistors ͑FETs͒ are important in today's high frequency communication systems. 4 The development of high electron mobility transistors ͑HEMTs͒ in the late 1970s in the AlGaAs/GaAs materials system gave device designers the opportunity to exploit the high mobility of undoped GaAs to improve fieldeffect transistor performance. The primary motivation for the use of the AlGaAs/GaAs system is that AlGaAs is lattice-matched to GaAs over the entire compositional range. 5,6 The GaAs/InGaAs pseudomorphic high electron mobility transistor ͑PHEMT͒ has attracted interest as an alternative to the AlGaAs/GaAs HEMTs because it exhibits excellent carrier confinement and a depressed deep-level concentration in the material with the higher bandgap, which results in persistent photoconductivity at cryogenic temperatures. 7 Most importantly, InGaAs layers on GaAs substrates have been popular for use in PHEMTs because they have favorable transport over GaAs, substrates of which are relatively cost-effective. To grow pseudomorphic strained layers, the critical thickness at which the strain in a lattice mismatched layer relaxes through the generation of misfit dislocation must be known. 8,9 An improvement over the GaAs/InGaAs PHEMT is the AlGaAs/InGaAs PHEMT with a small AlAs mole fraction, 10-12 which has a larger conduction-band discontinuity than the GaAs/InGaAs PHEMT, supporting a greater carrier concentration without experiencing the effects related to a large mole fraction of AlGaAs. Although excellent performance has been achieved by growing pseudomorphic strained ch...

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Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Lin

2011

J. Electrochem. Soc.

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“…GaInP has low reactivity with oxygen, low carrier surface recombination velocity, high ratio of valence band discontinuity to conduction band discontinuity and low density of DX centres compared to AlGaAs. The GaInP/GaAs systems are emerging as promising substitutes for the fabrication of novel electronic and optoelectronic devices [1][2][3][4][5][6]. Efforts have been made to study the basic electronic and optoelectronic properties of the GaInP/GaAs heterostructures and also to demonstrate their differences with AlGaAs/GaAs systems [7][8][9][10].…”

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confidence: 99%

Multi-interface roughness effects on electron mobility in a Ga_0.5In_0.5P/GaAs multisubband coupled quantum well structure

Sahu¹,

Shore

2009

Semicond. Sci. Technol.

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We analyse the effect of interface roughness scattering on low temperature electron mobility μ n mediated by intersubband interactions in a multisubband coupled Ga 0.5 In 0.5 P/GaAs quantum well structure. We consider a barrier δ-doped double quantum well system in which the subband electron mobility is limited by the interface roughness scattering μ IR n and ionized impurity scattering μ imp n . We analyse the effect of the intersubband interaction and coupling of subband wavefunctions through the barrier on the intrasubband and intersubband transport scattering rates. We show that the intersubband interaction controls the roughness potential of different interfaces through the dielectric screening matrix. In the case of lowest subband occupancy, the mobility is mainly governed by the interface roughness of the central barrier. Whereas when two subbands are occupied, the interface roughness of the outer barrier predominates due to intersubband effects. The influence of the intersubband interaction also exhibits interesting results on the well width up to which the interface roughness dominates in a double quantum well structure.

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“…Here, control of the high-k/III-V interface is the key issue. For this purpose, direct deposition of high-k insulators (mostly Al 2 O 3 ) by atomic layer deposition (ALD) on GaAs and InGaAs surfaces is drawing much attention [1][2][3][4] since the encouraging report on GaAs [1]. However, a recent detailed study on ALD Al 2 O 3 /GaAs interface [4] indicated existence of strong Fermi level pinning, and one is not sure whether such an direct deposition approach is a viable one for fabrication of high performance MIS devices.…”

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Control of interface between HfO₂ and air‐exposed InGaAs by ultrathin Si interface control layer

Akazawa

Hasegawa

2010

Phys. Status Solidi (c)

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This paper attempts to control the interface between the air‐exposed InGaAs wafer and a high‐k dielectric by the Si interface control layer (ICL) technique. As the high‐k insulator, HfO2 film was formed by atomic layer deposition (ALD). Prior to a molecular beam epitaxy (MBE) growth of the Si ICL, efforts were made to minimize native oxide components from the InGaAs surface by various wet surface treatment. After the growth of the Si ICL, an ultrathin SiNx layer was formed by in‐situ partial nitridation of the Si ICL to prevent a subcutaneous oxidation during the sample transfer in air to the ALD chamber. Surface/interface properties were characterized by in‐situ X‐ray photoelectron spectroscopy (XPS) at each step of interface formation. By using HF‐based cleaning, interface bonding configurations similar to those obtained by in‐situ UHV process was realized with no trace of native oxide components. As compared with the ALD HfO2/InGaAs metal‐insulator‐semiconductor (MIS) structure which showed existence of strong Fermi level pinning, insertion of the Si ICL achieved large reduction of interface state density, Dit, giving a minimum value of 2x1011 eV‐1cm‐2. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

Cited by 11 publications

References 14 publications

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Multi-interface roughness effects on electron mobility in a Ga_0.5In_0.5P/GaAs multisubband coupled quantum well structure

Control of interface between HfO₂ and air‐exposed InGaAs by ultrathin Si interface control layer

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Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

Cited by 11 publications

References 14 publications

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure

Control of interface between HfO2 and air‐exposed InGaAs by ultrathin Si interface control layer

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Multi-interface roughness effects on electron mobility in a Ga_0.5In_0.5P/GaAs multisubband coupled quantum well structure

Control of interface between HfO₂ and air‐exposed InGaAs by ultrathin Si interface control layer