2018
DOI: 10.1016/j.jallcom.2017.11.042
|View full text |Cite
|
Sign up to set email alerts
|

Novel composite nanomaterials with superior thermal and pressure stability for potential LED applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 12 publications
(5 citation statements)
references
References 61 publications
0
5
0
Order By: Relevance
“…Having a wide band gap, large electron mobility, and exciton binding energy, ZnO is the most suitable material for fabrication of LEDs. , As p-type ZnO is still a challenging problem, different p-type materials (hole injecting layers), either organic (PEDOT:PSS (poly­(3,4-ethylenedioxythiophene) polystyrenesulfonate), MEH PPV (poly­[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]), SubPc (subphthalocyanine)), or inorganic (p-GAN, AlGaN, CuAlO 2 , NiO, Si, , SrCu 2 O 2 ) are used in heterojunction diodes . Having low lattice mismatch (nearly 1.9%), GAN is the most suitable material for use as a p-type material.…”
Section: Application Of Tm Znomentioning
confidence: 99%
“…Having a wide band gap, large electron mobility, and exciton binding energy, ZnO is the most suitable material for fabrication of LEDs. , As p-type ZnO is still a challenging problem, different p-type materials (hole injecting layers), either organic (PEDOT:PSS (poly­(3,4-ethylenedioxythiophene) polystyrenesulfonate), MEH PPV (poly­[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]), SubPc (subphthalocyanine)), or inorganic (p-GAN, AlGaN, CuAlO 2 , NiO, Si, , SrCu 2 O 2 ) are used in heterojunction diodes . Having low lattice mismatch (nearly 1.9%), GAN is the most suitable material for use as a p-type material.…”
Section: Application Of Tm Znomentioning
confidence: 99%
“…The Nd-doped ZnO exhibits dramatically sharp luminescence peaks, which is in sharp contrast with pure ZnO. Moreover, luminescent peaks are located at 897.6, 815.1, 674.2, and 604.0 nm ( 4 F 3/2 , 4 F 5/2 + 2 H 9/2 , 4 F 9/2 , and 4 G 7/2 + 2 G 5/2 ), corresponding to the UV–vis absorption spectra 20 . Figure 2d shows the Nd-ion doping concentration-dependent PL intensity of Zn 1 − x Nd x O, which initially increases with the enhancement of the Nd concentration.…”
Section: Introductionmentioning
confidence: 99%
“…S4). The SERS 20 . Figure 2d shows the Nd-ion doping concentration-dependent PL intensity of Zn 1 − x Nd x O, which initially increases with the enhancement of the Nd concentration.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO has been widely studied because of its enrichment, economical fabrication techniques, high photosensitivity, nontoxicity, and photochemical stability. 8,9 Moreover, ZnO has other distinctive properties such as biocompatibility, self-cleaning, and photocatalysis, providing multifunctional potential. 10,11 However, the wide band gap and the rapid recombination of photoexcited electron−hole pairs of ZnO hinder the practical application of photoelectric conversion.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it is crucial to develop high sensitivity and lower cost SERS semiconductor substrates. ZnO has been widely studied because of its enrichment, economical fabrication techniques, high photosensitivity, nontoxicity, and photochemical stability. , Moreover, ZnO has other distinctive properties such as biocompatibility, self-cleaning, and photocatalysis, providing multifunctional potential. , However, the wide band gap and the rapid recombination of photoexcited electron–hole pairs of ZnO hinder the practical application of photoelectric conversion. There are several ways to improve the photoelectric conversion efficiency of ZnO, such as doping, surface modification, crystal growth control, and heterostructure formation.…”
Section: Introductionmentioning
confidence: 99%