Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

Zhuang, W.W.; Pan, Wei; Ulrich, Bruce; Lee, J.J.; Stecker, Lisa; Burmaster, A.; Evans, David R.; Hsu, Sheng Teng; Tajiri, Masayuki; Shimaoka, A.; Inoue, Kuniaki; Naka, T.; Awaya, Nobuyoshi; Sakiyama, A.; Wang, Y.; Liu, S.Q.; Wu, N. J.; Ignatiev, A.

doi:10.1109/iedm.2002.1175811

Cited by 142 publications

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“…This resistance switching attracts considerable attention due to the potential for device application such as resistance random access memories (RRAM). 6 The origin of resistance switching, however, is still an open question. One of the possibilities is the bulk effect 1,4,5,6 that a phase transition of perovskite takes place between insulating and conducting states, similar to the breakdown of charge-ordered insulating state in manganites induced by electric-field at low temperature.…”

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confidence: 99%

“…6 The origin of resistance switching, however, is still an open question. One of the possibilities is the bulk effect 1,4,5,6 that a phase transition of perovskite takes place between insulating and conducting states, similar to the breakdown of charge-ordered insulating state in manganites induced by electric-field at low temperature. 7,8,9 The other is the interface effect, where voltage pulses reversibly alter the nature of potential barrier formed in the insulating (or semiconducting) perovskite in contact with metallic electrodes.…”

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confidence: 99%

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Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

Fujii

Kawasaki

Sawa

et al. 2004

Applied Physics Letters

342

209

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Transport properties have been studied for a perovskite heterojunction consisting of SrRuO3 (SRO) film epitaxially grown on SrTi0.99Nb0.01O3 (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage (I-V ) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an n-type semiconductor (Nb:STO). A hysteresis appears in the I-V characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 µs -10 ms duration. 73.40.-c, 73.30.+y, 77.90.+k Recently, reversible resistance switching between two or multilevel resistance states has been found to take place by short voltage pulses at room temperature in capacitor-like devices composed of a wide variety of insulating perovskite oxides such as manganites, 1,2,3 titanates, 4 and zirconates 5 sandwiched between two metallic electrodes. This resistance switching attracts considerable attention due to the potential for device application such as resistance random access memories (RRAM). 6 The origin of resistance switching, however, is still an open question. One of the possibilities is the bulk effect 1,4,5,6 that a phase transition of perovskite takes place between insulating and conducting states, similar to the breakdown of charge-ordered insulating state in manganites induced by electric-field at low temperature. 7,8,9 The other is the interface effect, where voltage pulses reversibly alter the nature of potential barrier formed in the insulating (or semiconducting) perovskite in contact with metallic electrodes. 2,3 We have recently shown that the resistance switching occurs at a Ti/Pr 0.7 Ca 0.3 MnO 3 (PCMO) interface, 3 which exhibits Schottky-like currentvoltage (I-V ) characteristics, where Ti and PCMO can be regarded as a shallow work-function metal and a p-type semiconductor, respectively. A possible origin for the resistance switching is attributed to the change in Schottky barrier height (or width) by trapped charge carriers at the interface states. However, non-epitaxial structure and chemically incompatible materials combination make it difficult to characterize the transport properties and interface electronic structure in detail.In the present study, we have investigated the transport properties of a heteroepitaxial perovskite oxide interface consisting of SrRuO 3 (SRO) deposited on (001) SrTi 0.99 Nb 0.01 O 3 (Nb:STO) single crystal substrate. The SRO/Nb:STO interface exhibits rectifying Schottky-like I-V characteristics with large hysteresis and the resistance can be changed by applying pulsed-voltage stress.Epitaxial SRO thin films (100 nm) were grown on (001) Nb:STO single crystal substrates by a pulse laser deposition technique. Typical growth conditions were a substrate temperature of 700 • C and an oxygen pressure of 100 mTorr. After the deposition, the films were in-site annealed at 400 • C for 30 minutes under an oxygen pressure ...

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confidence: 99%

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confidence: 99%

Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

Fujii

Kawasaki

Sawa

et al. 2004

Applied Physics Letters

342

209

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“…[1] Among them, the electrical pulse induced resistance change (EPIR) effect is one of the more interesting phenomena discovered recently in perovskite oxides with special attention to colossal magnetoresistance (CMR) oxides at room temperatures. [1][2][3][4][5][6] An EPIR device is a room temperature, non-volatile, reversible resistance switching device which is switched by the application of short electrical pulses across two electrodes [2] . It is the basis for a resistive random access memory (RRAM) [3] , which has the projected advantage of non-volatility, fast programming, small bit cell size and low power consumption.…”

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confidence: 99%

Direct resistance profile for an electrical pulse induced resistance change device

Chen

Strozier

et al. 2005

Applied Physics Letters

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We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active layer. The symmetric device is one in which the electrode shape, size, composition, and deposition processing are identical. We show that under certain limitations of pulse switching voltage, such a symmetric electrical pulse induced resistance change device can exhibit either no net device resistance switching at room temperature, or bipolar switching with the resistance hysteresis curve exhibiting a "table leg" structure. The resistance measurements are made using surface scanning Kelvin probe microscopy, which allows for the measurement of the profile of resistance from one electrode, across the Pr0.7Ca0.3MnO3 material and into the second electrode, both before resistance switching and after switching. The results show that resistance switching in the symmetric device occurs primarily in the interface region within about 1 to 3 micron of the electrical contact surface. Resistance switching is also observed in the bulk Pr0.7Ca0.3MnO3 material although at a lower level. Symmetry considerations for a two terminal symmetric device that can switch resistance are discussed, and the data reported here is consistent with the symmetric model previously developed.[*]

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“…One emerging candidate is the resistance random access memory (RRAM) based on metal oxides [2,3] and organic semiconductors [4][5][6]. These RRAMs have shown electrically induced resistive switching effects and have been proposed as the basis for future non-volatile memories.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Rocha

Chen

Gomes

2012

Technological Innovation for Value Creation

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Abstract. Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording currentvoltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit. Keywords:Resistive Random Access Memory (RRAM), Switching, Electrical Bistability, Non-Volatile Memory, Negative Differential Resistance (NDR). IntroductionOrganic memory devices are becoming interesting candidates for electronic applications in information technologies [1]. One emerging candidate is the resistance random access memory (RRAM) based on metal oxides [2,3] and organic semiconductors [4][5][6]. These RRAMs have shown electrically induced resistive switching effects and have been proposed as the basis for future non-volatile memories. They associate the advantages of Flash and DRAM (dynamic random access memories) such as higher packing density, faster switching speed and longer storage life. Although, several metal-oxides structures exhibited resistive switching properties, the measured switching parameters vary in a wide range, which calls for a more consistent and uniform characterization methodologies. Furthermore, reported switching speeds vary by orders of magnitude [7][8][9][10][11][12][13][14]. The values range from nanoseconds to milliseconds. The inconsistencies might be due to different semiconductors, device geometries, or measurement procedures. In order to clarify these discrepancies, we characterize the switching speed of a metal-oxide memory device using dynamic measurements and equivalent circuit modeling.The dynamic characterization of the metal-oxide polymer structure through a double RC circuit provides insight on the switching phenomenon. It is demonstrated the relevance of the oxide layer and its role on limiting the switching speed. Contribution to Value CreationOrganic based memory devices provide a simplified manufacturing process yielding low-cost, flexible, and light-weight area approaching the nano-scale dimensions.

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Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

Cited by 142 publications

References 1 publication

Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3

Direct resistance profile for an electrical pulse induced resistance change device

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

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