Nanowires and nanotubes are important building blocks for nanoscale optoelectronics, as they can function as miniaturized devices as well as electrical interconnects.[1] Nanodevices such as field-effect transistors (FETs), [2] Schottky diodes, [3] electrical switches, [4] and memories [5] have thus far been demonstrated. As a very promising way for achieving 1D nanostructures, electrospinning has the advantages of device size reduction and more compact component density in circuits. [6,7] Electrospun nanowires exhibit several amazing characteristics, such as very large surface area to volume ratios, [8] flexibility in surface functionalities, [9] and superior mechanical performances.[10] It would be meaningful to combine the electrospinning technique with controllable ceramic nanowires assembly for device fabrication, as this would provide a simple, rapid, and cheap way to construct patterned nanoarrays and circuits. ZnO, with a large direct bandgap of 3.37 eV, is one of the most promising materials for applications such as gas sensors, [11] diodes, [12] solar cells, [13] resonators, [14] and other photoelectric devices. Meanwhile, it is highly desired to prepare 1D ZnO nanostructures doped with a selection of elements for enhancing and controlling their mechanical, electrical, and optical performance. So far, several doped 1D ZnO nanostructures have been synthesized [15][16][17][18][19][20] that are important for practical applications. Aluminum-doped zinc oxide (AZO), as a possible alternative transparent conductive oxide (TCO) to indium tin oxide (ITO), has attracted much attention because of its unique optical and electrical characteristics as well as its low cost and non-toxicity. However, there are few reports on the preparation of AZO nanostructures and their properties, although much work has been carried out on AZO films. In this communication, we report on a photoconductor device that is sensitive to illumination with below-gap light and a memory assembled by electrospinning a single AZO nanowire, both of which, to the best of our knowledge, have never been reported before. For this purpose, well-aligned and highly ordered architectures of 1D nanostructures were required. Although a number of approaches have been demonstrated to collect spatially oriented electrospun nanowires, few attempts have been made to directly obtain oriented electrospun nanowires for device fabrications. [21][22][23] Herein, by using a "Cu bridge" as the cathode, which consists of two conductive copper filaments separated by a void gap of 1 cm width (Fig. 1a), the electrospun nanowires could be uniaxially aligned over long length scales during the e-spinning process (Fig. 1b). The nanowires were then directly transferred to a silicon substrate with a 500 nm-thick thermally grown SiO 2 layer, and calcined at 550°C at a heating rate of 10°C min -1 in air for 3 h to obtain well-aligned polycrystalline AZO nanowires (Fig. 1c). Gold electrodes were then deposited on the AZO nanowires by thermal evaporation using a mask to form channe...