Novel collector design for high-speed SiGe:C HBTs

Heinemann, B.; Rücker, H.; Barth, R.; Bauer, J.; Bolze, D.; Bugiel, E.; Drews, Jürgen; Ehwald, K.‐E.; Grabolla, T.; Haak, U.; Hoppner, W.; Knoll, D.; Krüger, D.; Kuck, B.; Kurps, R.; Marschmeyer, M.; Richter, H.; Schley, P.; Schmidt, D.; Scholz, R.; Tillack, Bernd; Winkler, Wolfgang; Wolnsky, D.; Wulf, H.-E.; Yamamoto, Yuji; Zaumseil, P.

doi:10.1109/iedm.2002.1175953

Cited by 92 publications

(36 citation statements)

References 2 publications

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“…The circuit was designed in IHP's 0.25 µm SiGe:C BiCMOS technology SG25H1 which offers transit frequencies around 200 GHz [5]. In this process the HBT module is introduced after gate spacer formation and before CMOS source/drain implantation.…”

Section: Sige:c Technology and Devicesmentioning

confidence: 99%

A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology

Chartier¹,

Schleicher²,

Korndörfer

et al. 2007

2007 European Microwave Integrated Circuit Conference

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Section: Sige:c Technology and Devicesmentioning

confidence: 99%

A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology

Chartier¹,

Schleicher²,

Korndörfer

et al. 2007

2007 European Microwave Integrated Circuit Conference

View full text Add to dashboard Cite

“…The circuits were designed in IHP's 0.25 µm SiGe:C BiCMOS technology SG25H1 which offers transit frequencies f T around 200 GHz [7]. In this process the HBT module is introduced after the gate spacer formation and before CMOS source/drain implantation.…”

Section: Sige:c Bicmos Technologymentioning

confidence: 99%

A Compact Low-Power SiGe:C BiCMOS Amplifier for 77-81 GHz Automotive Radar

Schleicher

Chartier

Fischer³

et al. 2008

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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Abstract-In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2 dB at exactly 79 GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency range. Its performance was measured at different temperatures, showing a decrease of 5.3 dB in gain between room temperature and 85• C. The measured -1 dB input compression point is at -15 dBm. The power consumption is 52 mW at a supply voltage of 2.7 V. The circuit has a compact layout and consumes an area of 525 x 500 µm 2 including bonding pads.

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“…This circuit was designed on a 0.25 µm SiGe:C BiC-MOS technology [4]. In this process the HBT module is introduced after gate spacer formation and before CMOS source/drain implantation.…”

Section: Sige:c Technology and Devicesmentioning

confidence: 99%

SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage

Chartier¹,

Liu

Fischer

et al. 2007

2007 European Microwave Integrated Circuit Conference

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Abstract-A Si/SiGe bipolar dynamic frequency divider designed for 77GHz/79GHz automotive radar is presented, which uses a transimpedance amplifier topology to improve sensitivity and operational bandwidth. Capable of operation for input frequencies from 25 GHz up to 93 GHz, the divider consumes only 35 mA at 5 V supply voltage and has a very compact die area of 295 x 475 µm 2 . In addition, measurements show that the divider operates in the full radar frequency band (76 GHz-81 GHz) up to a temperature of 100°C.

show abstract

Novel collector design for high-speed SiGe:C HBTs

Cited by 92 publications

References 2 publications

A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology

A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology

A Compact Low-Power SiGe:C BiCMOS Amplifier for 77-81 GHz Automotive Radar

SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage

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