Abstract:Abstract-In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2 dB at exactly 79 GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency range. Its performance was measured at different temperatures, showing a decrease of 5.3 dB in gain… Show more
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