2015
DOI: 10.1016/j.optcom.2015.04.008
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Novel closed-form solution for spin-polarization in quantum dot VCSEL

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Cited by 12 publications
(9 citation statements)
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“…For 3 periods, the total length of the device is 1710 µm. The device parameters, obtained from the literature, are given in Table 1 [15][16][17]. The Bragg wavelength is chosen to be equal to the QD ground-state wavelength and the device operates at 0.98 of the threshold conditions.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…For 3 periods, the total length of the device is 1710 µm. The device parameters, obtained from the literature, are given in Table 1 [15][16][17]. The Bragg wavelength is chosen to be equal to the QD ground-state wavelength and the device operates at 0.98 of the threshold conditions.…”
Section: Resultsmentioning
confidence: 99%
“…Carrier transport between the dot states is determined by capture/escape rates, spontaneous-emission rate, and stimulated-emission rate. The rate equation for electrons in the k-th energy state for subsection ε will be written as [15]:…”
Section: Theorymentioning
confidence: 99%
“…In this work, the numerical model used to simulate the behavior of the single section InAs/GaAs QD s-VCSEL is based on the electron-hole QD Spin Flip Model presented in [23][24][25]. In this model, the conduction band of the QD s-VCSEL consists of three non-degenerate energy levels, designated as the Ground State (GS), the First Excited State (ES1) and the Second Excited State (ES2).…”
Section: Qd Materials Numerical Modelmentioning
confidence: 99%
“…These states are accompanied by an extra 2D Wetting Layer (WL) and are separated by 60meV. On the other hand, the valance band comprises five non-degenerate energy levels, one GS and four ES (ES1, ES2, ES3 and ES4) contrary to [23] and [24] which uses eight states, one GS and seven ES. This modification is done to simplify our model and it is in accordance with other electron-hole QD models such as [26].…”
Section: Qd Materials Numerical Modelmentioning
confidence: 99%
“…The spin-up and spin-down populations of holes in the dots and wetting layer can also be included [12,13], although in most cases it is adequate to assume that the spin relaxation of holes is instantaneous. Also, carrier populations in excited states of the dots can be included in a more general model [14,15]. Our group has developed a model [16,17] that, whilst only retaining equations for the minimum number of carrier populations, has included the addition of birefringence and dichroism in the equations for the electric fields to extend the well-known spin-flip model (SFM) [18] to deal with QD spin-lasers.…”
Section: Introductionmentioning
confidence: 99%