Novel chirped multilayer quantum-dot lasers

Lin, Gray; Chang, Chun; Tseng, Wei-Shiuan; Lee, C. P.; Lin, Kuo‐Hung; Xuan, Rong; Y., J.

doi:10.1117/12.781955

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…The waveguide width and cavity length of investigated devices were 10 µm and 2.5 mm, respectively. The detailed crystal growth [8] and device fabrication [10] can be found in our previous publications. Figure 1a shows the evolution of lasing spectra with injection current.…”

Section: Resultsmentioning

confidence: 99%

“…Then, Chirped QD multilayers were designed to achieve a wide emission spectrum in suplerluminecent diodes [4] and broadband laser diodes [5,6]. Afterwards, chirped QD multilayers found novel applications in external-cavity QD lasers, mode-locked QD lasers, and dual-wavelength QD lasers [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Second, the optical gain spectra can be engineered independently for individual wavelength through layer numbers. We have incorporated DC-MQD to develop novel devices of dual-wavelength QD edge emitting lasers with simultaneous two lasing wavelengths around threshold [8], low threshold current and widely tunable external cavity QD lasers [9], dual-wavelength and ground-state (GS) mode-locked QD lasers with a wide operation range [10].…”

Section: Introductionmentioning

confidence: 99%

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Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions

2019

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The dual-wavelength lasing emissions of digitally chirped multilayer quantum dot (QD) lasers are investigated both experimentally and theoretically. The two lasing wavelengths are both identified as ground-state (GS) emissions but originated from different stacks of QD multilayers. The lasing spectra exhibited broadening and splitting properties by injecting more current. Moreover, the wavelength-resolved light-current characteristics reveal that first GS lasing intensity upon the threshold of second GS transitions neither saturates nor droops with increasing injection current, but increases with slightly reduced slope efficiency. A theoretical model is developed for digitally chirped multilayer QD lasers. The simulation results qualitatively reproduce the experimental observations.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions

2019

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“…Figure 3 shows the modal gain and lasing wavelength as function of threshold current density for investigated chirped QD lasers. Base on the gain-current analysis [12] along with the empirical fitting formula [14], the switched transitions from 1.26 µm to 1.18 µm at cavity length of 0.75 mm are associated with emissions from GS-QD L to ES-QD L . The fitted GS saturated gain is 16.8 cm −1 for 4 layers of QD L or 4.2 cm −1 per layer of QD L , which fits very well in the reasonable range of 3~5 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

“…Also bear in mind that the experimental data may have uncertainty of +/− 10 nm due to wafer non-uniformity as well as calibration factor of thickness and composition. The detail crystal growth can be found in [12].…”

Section: Methodsmentioning

confidence: 99%

Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Lin¹,

Su²,

Cheng³

2012

Opt. Express

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Low threshold and widely tunable InAs/GaAs quantum-dot lasers are implemented with grating-coupled external-cavity arrangement. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is not more than 0.9 kA/cm2 and no noticeable threshold jump is observed. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended to 150 nm, from 1143 to 1293 nm. The effect of cavity length on the tuning characteristics is discussed and the strategy for design and optimization of multilayer quantum-dot structure is also proposed.

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Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition

Roca

Kamiya

2021

Applied Physics Letters

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We report the precise and broadband tuning of the photoluminescence (PL) from a stacked submonolayer (SML) InAs nanostructure across the 2D to 3D transition. We have recently reported the growth of stacked SML InAs nanostructures by molecular beam epitaxy, which leads to the formation of two distinct types of SML nanostructures: 2D islands and 3D structures. In contrast to the well-investigated transition in Stranski–Krastanov (SK) growth of InAs nanostructures, the transition in SML growth is still largely unexplored. Here, the properties of three- and four-stack SML InAs nanostructures are investigated by PL measurements and are interpreted in the context of the transition. At the transition, a characteristic change in the PL is observed, while the controllability of the PL is maintained across the transition. Furthermore, control of the transition itself is possible by changing the SML stack configuration. A brief comparison with the SK transition is also discussed.

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Novel chirped multilayer quantum-dot lasers

Cited by 7 publications

References 6 publications

Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions

Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions

Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition

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