Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Lin, Gray; Su, Pei-Yin; Cheng, Hsu-Chieh

doi:10.1364/oe.20.003941

Cited by 21 publications

(12 citation statements)

References 20 publications

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“…The ground-state (GS) and the excited-state (ES) wavelengths of InAs/InGaAs QDs cannot be easily resolved from the PL spectrum as it is subjected to sub-cavity modulation effects. The GS gain-peak wavelength was determined separately to be 1280-1300 nm, while the ES gain-peak wavelength was estimated to be 1200-1220 nm [8]. The sub-cavity effect can be understood as a Fabry-Perot etalon established between bottom DBR and air-semiconductor interface [9].…”

Section: Resultsmentioning

confidence: 99%

Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector

Hsu

Lin

2018

Photonics

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Quantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.

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Section: Resultsmentioning

confidence: 99%

Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector

Hsu

Lin

2018

Photonics

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“…Many tunable QD lasers, despite having a sizable tuning range, have a low output power, often only up to tens of mW [6,40,45]. While this may be acceptable for some applications (for example some methods of biological imaging where keeping the sample alive and undamaged is the priority [16]), other applications such as second harmonic generation can require a much higher output power.…”

Section: Maximising Powermentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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“…Then, Chirped QD multilayers were designed to achieve a wide emission spectrum in suplerluminecent diodes [4] and broadband laser diodes [5,6]. Afterwards, chirped QD multilayers found novel applications in external-cavity QD lasers, mode-locked QD lasers, and dual-wavelength QD lasers [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Second, the optical gain spectra can be engineered independently for individual wavelength through layer numbers. We have incorporated DC-MQD to develop novel devices of dual-wavelength QD edge emitting lasers with simultaneous two lasing wavelengths around threshold [8], low threshold current and widely tunable external cavity QD lasers [9], dual-wavelength and ground-state (GS) mode-locked QD lasers with a wide operation range [10].…”

Section: Introductionmentioning

confidence: 99%

Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions

2019

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The dual-wavelength lasing emissions of digitally chirped multilayer quantum dot (QD) lasers are investigated both experimentally and theoretically. The two lasing wavelengths are both identified as ground-state (GS) emissions but originated from different stacks of QD multilayers. The lasing spectra exhibited broadening and splitting properties by injecting more current. Moreover, the wavelength-resolved light-current characteristics reveal that first GS lasing intensity upon the threshold of second GS transitions neither saturates nor droops with increasing injection current, but increases with slightly reduced slope efficiency. A theoretical model is developed for digitally chirped multilayer QD lasers. The simulation results qualitatively reproduce the experimental observations.

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Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Cited by 21 publications

References 20 publications

Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector

Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Digitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissions

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