Novel Bimetallic Thiocarboxylate Compounds as Single-Source Precursors to Binary and Ternary Metal Sulfide Materials

Deivaraj, Theivanayagam C.; Park, † Jin-Ho; Afzaal, Mohammad; O’Brien, Paul; Vittal, Jagadese J.

doi:10.1021/cm031027v

Cited by 72 publications

(51 citation statements)

References 45 publications

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“…This change of morphologies by different preparation conditions was also observed with aerosol-assisted chemical vapor deposition. 6 Compositional analysis of samples was measured by EDX attached to FE-SEM. The weight percentages of silver, indium, and sulfur were converted to atomic percentages and are listed in Table 2 Thin Film Deposition on MPS-Modified Glass Substrates.…”

Section: Resultsmentioning

confidence: 99%

“…AgIn 5 S 8 has direct energy band gaps of 1.80 eV at 300 K and 1.90 eV at 96 K and is considered one of the potential candidates for photovoltaic and optical applications. [4][5][6][7][8][9] However, there are not many reports of the thin film formation of AgIn 5 S 8 in the literature. This type of film can be prepared by the sulfurization of an In-rich metallic precursor 8,9 or spray pyrolysis of silver ion, indium ion, and thiourea with various silver to indium molar ratios.…”

Section: Introductionmentioning

confidence: 99%

“…Single source precursors can also be utilized to grow AgIn 5 S 8 by chemical vapor deposition. [5][6][7] More interestingly, O'Brien et al 5,6 and Banger et al 7 showed that the spinel phase of silver indium sulfide (AgIn 5 S 8 ) thin films was obtained from the single source precursor Ag/In with a stoichiometric ratio of 1:1, as opposed to the formation of AgInS 2 residue from pyrolysis of the same precursor. The equilibrium between AgInS 2 and AgIn 5 S 8 is not clear.…”

Section: Introductionmentioning

confidence: 99%

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Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions

Lin

Lee

2007

Crystal Growth & Design

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Thin films of the silver indium sulfide (AgIn 5 S 8 ) ternary semiconductor were prepared from acidic aqueous solutions containing silver nitrate, indium nitrate, and thioacetamide. Various preparative parameters, such as pH of the precursor solution, silver to indium concentration ratio [Ag]/[In], and postreaction thermal treatment conditions were changed in order to grow uniform and adherent thin films on glass substrates. A series of X-ray diffraction patterns and scanning electron micrographs were used to reveal the growth process over time. It was found that granular Ag 2 S primary films were first attached to the glass substrate, followed by the indium sulfide deposition. A (1 1 1) preferred oriented AgIn 5 S 8 with cubic spinel structure was obtained from the [Ag]/[In] ) 4 and pH 0.6 precursor solution after 673 K thermal treatment for 1 h in an Ar environment. A two-step deposition mechanism was proposed and discussed in terms of stability constants of metal complexes and classical nucleation theory. In addition, our preliminary study showed that 3-mercaptopropyl-trimethoxysilane (MPS)-modified glass substrates further promoted the homogeneity and adhesion of AgIn 5 S 8 thin films.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions

Lin

Lee

2007

Crystal Growth & Design

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“…23 The precursor 1 was synthesized according to a known literature method. 24 TG data reveal that the precursor decomposes in the temperature range 175-328°C to the orthorhombic phase AgInS 2 . The precursor was added to a mixture of DT and OA at room temperature (the molar ratio of precursor: DT = 1:50 and the volume ratio of DT: OA = 1:3).…”

Section: Methodsmentioning

confidence: 99%

Large nonlinear optical properties of ternary quantum dots and nanorods

Elim

Tian

et al. 2007

Nanophotonic Materials IV

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Recently there are many reports on the nonlinear optical (NLO) and electronics properties of semiconducting binary nanocrystals such as CdSe, PbS and CdS. In the spectral regime where the photon energy (ħω) is less than the bandgap (E g ), two photon absorption and two-photon-absorption-associated processes are dominant mechanisms. When ħω > E g , however, saturable absorption due to band filling mechanism plays an important role. However, very few results related to optoelectronics properties on ternary nanocrystals are reported. Here, we present large NLO properties of ternary nanocrystals such as AgInS 2 quantum dots (QDs) and AgInSe 2 nanorods (NRs) studied by femtosecond laser pulse at 780 nm. By employing Z-scan and transient absorption techniques, the third-order susceptibility of AgInS 2 QDs and AgInSe 2 NRs has been measured to be as large as 10 -8 esu. The origin of NLO properties in AgInS 2 QDs is due to two photon absorption. While the NLO behavior of AgInSe 2 NRs is mainly contributed by saturation in the nonlinear absorption and optical Kerr nonlinearity with a recovery time determined to be a few ten picoseconds.

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“…Vittal and coworkers recently reported another strategy toward the design of single-source precursors for I-III-VI semiconductor films [77]. Though the TGA of the mixedmetal compound XIV (M = Ga, In) and Ag analogs showed facile decomposition into the ternary sulfides, aerosolassisted CVD studies yielded In 2 S 3 or AgIn 5 S 8 films rather than the desired MM'S 2 phase.…”

Section: Precursor Strategies For Stoichiometrically-complex Thin Filmsmentioning

confidence: 99%

Recent Advances in Chemical Vapor Deposition

Fahlman¹

2006

COC

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Chemical vapor deposition (CVD) represents the method-of-choice for thin film growth, as well as nanomaterials such as carbon nanotubes. Distinct advantages of this technique include low cost, and strict control over the resultant film stoichiometry, morphology, and thickness. The most critical component of a CVD process is the precursor that is employed. Hence, there has been a continuing interest in the development of new CVD precursors that would be useful for a range of thin film applications. This review will highlight recent advances in CVD precursor design, including both single-source and co-reactant precursor systems. Whereas the earliest examples of CVD precursors included metal β-diketonates, this review will feature novel ligand systems that have already been used, or have been proposed for future MOCVD applications. In addition, we will describe new methodologies that have improved the deposition process through innovations in precursor delivery and decomposition within the CVD system. These latter developments have extended the scope of CVD applications to include precursors that are not particularly volatile, and have allowed for a reduction in the level of impurities in the growing film.

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Novel Bimetallic Thiocarboxylate Compounds as Single-Source Precursors to Binary and Ternary Metal Sulfide Materials

Cited by 72 publications

References 45 publications

Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions

Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions

Large nonlinear optical properties of ternary quantum dots and nanorods

Recent Advances in Chemical Vapor Deposition

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Novel Bimetallic Thiocarboxylate Compounds as Single-Source Precursors to Binary and Ternary Metal Sulfide Materials

Cited by 72 publications

References 45 publications

Growth of Crystalline AgIn5S8 Thin Films on Glass Substrates from Aqueous Solutions

Growth of Crystalline AgIn5S8 Thin Films on Glass Substrates from Aqueous Solutions

Large nonlinear optical properties of ternary quantum dots and nanorods

Recent Advances in Chemical Vapor Deposition

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Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions

Growth of Crystalline AgIn₅S₈ Thin Films on Glass Substrates from Aqueous Solutions